Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chang, Choon Wai"'
Autor:
Chang, Choon Wai, Choi, Z.-S., Thompson, Carl V., Gan, C.L., Pey, Kin Leong, Choi, Wee Kiong, Hwang, N.
Three terminal âdotted-I’ interconnect structures, with vias at both ends and an additional via in the middle, were tested under various test conditions. Mortalities (failures) were found in right segments with jL value as low as 1250 A/cm, an
Externí odkaz:
http://hdl.handle.net/1721.1/7533
Electromigration experiments have been carried out on straight interconnects that have single vias at each end, and are divided into two segments by a via in the center ("dotted-I" structures). For dotted-i structures in the second metal layer (M2) a
Externí odkaz:
http://hdl.handle.net/1721.1/3835
Failure mechanisms observed in electromigration (EM) stressed dual damascene Cu/SiO₂ interconnects trees were studied and simulated. Failure sites with âmelt patch’ or âcrater’ are common for test structures in the top metal layer, th
Externí odkaz:
http://hdl.handle.net/1721.1/3727
Autor:
Adan, Ofer, Robinson, John C., Huang, Tsu-Wen, Chuang, Ying-Cheng, Huang, Hsuan-Jui, Liu, Chung-Chang, Chu, Hsiao-Lun, Chen, Sheng-Yu, Li, Ming-Ju, Tang, Jun-Eu, Chee, Chiou-Shoei, Chang, Choon-Wai, Lee, Tung-Ying
Publikováno v:
Proceedings of SPIE; 11/4/2020, Vol. 11611, p1161139-1161139, 1p
Investigation and optimization of STI dry-etch induced overlay through patterned wafer geometry tool
Autor:
Adan, Ofer, Robinson, John C., Huang, Tsu-Wen, Chuang, Ying-Cheng, Huang, Hsuan-Jui, Liu, Chung-Chang, Chu, Hsiao-Lun, Chen, Sheng-Yu, Li, Ming-Ju, Tang, Jun-Eu, Chee, Chiou-Shoei, Chang, Choon-Wai, Lee, Tung-Ying
Publikováno v:
Proceedings of SPIE; February 2021, Vol. 11611 Issue: 1 p1161139-1161139-4