Zobrazeno 1 - 10
of 24
pro vyhledávání: '"Chandrasekar Sivakumar"'
Autor:
Yu-Hsuan Lin, Chandrasekar Sivakumar, Babu Balraj, Gowtham Murugesan, Senthil Kumar Nagarajan, Mon-Shu Ho
Publikováno v:
Nanomaterials, Vol 13, Iss 4, p 754 (2023)
The non-enzymatic glucose sensing response of pure and Ag-decorated vertically aligned ZnO nanorods grown on Si substrates was investigated. The simple low-temperature hydrothermal method was employed to synthesize the ZnO NRs on the Si substrates, a
Externí odkaz:
https://doaj.org/article/4fdb38d04c564cc8a0ebf93bbd3efa35
Publikováno v:
Nanomaterials, Vol 11, Iss 8, p 2013 (2021)
One of the promising nonvolatile memories of the next generation is resistive random-access memory (ReRAM). It has vast benefits in comparison to other emerging nonvolatile memories. Among different materials, dielectric films have been extensively s
Externí odkaz:
https://doaj.org/article/5e7dd9b58040431fa3835d95b1d58233
Publikováno v:
NanoNEXT. 3:1-7
The stable and efficient supercapacitor investigation synthesized tungsten-based oxides using many approaches. The impact of the tungsten precursor on the product was significant in this research, and the most important consequences are highlighted.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c443e17bb078c29d32e60c7a63873522
https://doi.org/10.54392/nnxt2221
https://doi.org/10.54392/nnxt2221
Autor:
C. Sudhakar, Saravanabhavan Munusamy, Ramesh Shanmugam, Shabbir Muhammad, Saifeldin M. Siddeeg, Vishnu Nayak Badavath, Chandrasekar Sivakumar, M. Sekar
Publikováno v:
Journal of Materials Science: Materials in Electronics. 34
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9022deef96e41ba0218efa957cdc30fc
https://doi.org/10.1007/s10854-022-09467-0
https://doi.org/10.1007/s10854-022-09467-0
Autor:
M. Gowtham, Chandrasekar Sivakumar, B. Mohanbabu, Narendhar Chandrasekar, K. Mohanraj, Babu Balraj, Mon-Shu Ho, N. Senthil Kumar
Publikováno v:
Nano. 17
Nanostructure-based resistive switching memory devices are being developed for low power, multilevel storage capability, extended retention capacity, and scalable devices. The zinc tungstate (ZnWO[Formula: see text] nanoparticle was prepared via the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::24f342bd15e6fffbd000f03a80f0429e
https://doi.org/10.1142/s1793292022500849
https://doi.org/10.1142/s1793292022500849
Autor:
Tomasz Raducha, Tara Nanut, Chao-Hui Feng, LaNell A. Williams, Emily Moravec, Orad Reshef, Chandrasekar Sivakumar
Publikováno v:
Nature Reviews Physics. 3:772-776
There isn't one single 'early career experience' in physics, and different subfields involve very different opportunities and challenges. Seven early career physicists who work on a range of research topics in different subfields discuss their views
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::59470c192eaa21510dd3ff7cbca2abd7
https://doi.org/10.1038/s42254-021-00379-2
https://doi.org/10.1038/s42254-021-00379-2
Autor:
Yu-Ting Liu, Po Neng Chiang, Liang-Ching Hsu, Heng Yi Teah, Wen Hui Li, Yu-Min Tzou, Chandrasekar Sivakumar, Yen Lin Cho, Mon-Shu Ho
Publikováno v:
Environmental Science: Nano. 7:3497-3508
Iron (hydr)oxides, which are ubiquitously distributed in the environment, often contain impurities such as Al. Aluminum-substituted goethite (AlG) is a typical assemblage of Al and Fe (hydr)oxides. In this study, the molecular-level mechanisms of PO4
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::253b595f9e64c8b25d82b5a46e908cf3
https://doi.org/10.1039/c9en01435g
https://doi.org/10.1039/c9en01435g
Akademický článek
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Autor:
Thangabalu Subramani, Govindaraj Thimmarayan, Babu Balraj, Narendhar Chandrasekar, Matheswaran Palanisamy, Senthil Kumar Nagarajan, Saranya Amirtharajan, Mohanraj Kumar, Chandrasekar Sivakumar
Publikováno v:
Inorganic Chemistry Communications. 142:109709
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c9334e76d3d89d0333dc2a07a848f101
https://doi.org/10.1016/j.inoche.2022.109709
https://doi.org/10.1016/j.inoche.2022.109709
Autor:
Mohanbabu Bharathi, Pei-Fang Chung, Chandrasekar Sivakumar, Senthil kumar Nagarajan, Babu Balraj, Mon-Shu Ho
Publikováno v:
Materials Letters. 308:131123
In recent years, the non-volatile resistive random-access memory (ReRAM) has been investigated for next-generation memory devices to fulfill the limitations of commercial transistor-based memory devices. Every now and then, peculiar nanostructures wi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aad076550349965d6fa09e6c0d8f99c4
https://doi.org/10.1016/j.matlet.2021.131123
https://doi.org/10.1016/j.matlet.2021.131123