Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Chandra Mohan Manoj Kumar"'
Autor:
Chandra Mohan, Manoj Kumar, Shim, Sang Kyun, Cho, Moon Uk, Kim, Tae Kyoung, Kwak, Joon Seop, Park, Joonmo, Jang, Nakwon, Ryu, Sang-Wan, Lee, Naesung, Lee, June Key
Publikováno v:
In Current Applied Physics August 2021 28:72-77
Autor:
Yang Li, Geok Ing Ng, Subramaniam Arulkumaran, Chandra Mohan Manoj Kumar, Kian Siong Ang, Zhi Hong Liu
Publikováno v:
2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82b3b2d62e261cbf407b37e0b1773f32
https://doi.org/10.1109/iciprm.2016.7528844
https://doi.org/10.1109/iciprm.2016.7528844
Autor:
Subramaniam Arulkumaran, Chandra Mohan Manoj Kumar, Gang Ye, Yang Li, R. Hofstetter, Hong Wang, Geok Ing Ng, M. J. Anand, Kian Siong Ang
Low-contact-resistance (Rc) non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contacts were realized on an undoped AlGaN/GaN high-electron-mobility transistor (HEMT) grown on a silicon substrate. Optimization of the rapid thermal process reveals that Rc decreases dra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::16110568dc8641d8efabb19ff038422c
http://hdl.handle.net/10220/25659
http://hdl.handle.net/10220/25659
Autor:
Chandra Mohan Manoj Kumar, S. C. Foo, Sukant K. Tripathy, K. Ranjan, Geok Ing Ng, Thirumaleshwara N. Bhat, Kian Siong Ang, S. Vicknesh, Subramaniam Arulkumaran, Surani Bin Dolmanan
Publikováno v:
Japanese Journal of Applied Physics. 54:04DF12
We have demonstrated 0.17-µm gate-length In0.17Al0.83N/GaN high-electron-mobility transistors (HEMTs) on Si(111) substrates using a non-gold metal stack (Ta/Si/Ti/Al/Ni/Ta) with a record-low ohmic contact resistance (Rc) of 0.36 Ω mm. This contact
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ff03d60a4efe7fcda6a53b576855cb7
https://doi.org/10.7567/jjap.54.04df12
https://doi.org/10.7567/jjap.54.04df12
Autor:
Yang Li, Subramaniam Arulkumaran, M. J. Anand, Gang Ye, Chandra Mohan Manoj Kumar, Zhihong Liu, Geok Ing Ng
Publikováno v:
Applied Physics Express. 8:041001
This work investigates the conduction mechanism of non-gold Ta/Si/Ti/Al/Ni/Ta ohmic contact in un-doped AlGaN/GaN high-electron-mobility transistors (HEMTs) grown on Si. Temperature-dependent current–voltage (I–V) measurements reveal that the con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::de11f17d6b3e750a647685fcddee8987
https://doi.org/10.7567/apex.8.041001
https://doi.org/10.7567/apex.8.041001
Autor:
Subramaniam Arulkumaran, Geok Ing Ng, Kumud Ranjan, Chandra Mohan Manoj Kumar, Siew Chuen Foo, Kian Siong Ang, Sahmuganathan Vicknesh, Surani Bin Dolmanan, Thirumaleshwara Bhat, Sudhiranjan Tripathy
Publikováno v:
Japanese Journal of Applied Physics; Apr2015, Vol. 54 Issue 4S, p1-1, 1p