Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Chandra Goradia"'
Publikováno v:
Surface and Interface Analysis. 15:641-650
Chemical composition of anodic oxides grown on lightly doped p-type InP have been investigated by XPS. Anodization was performed in the constant current density (Jc) mode using an ortho-phosphoric acid solution mixed with acetonitrile (ACN). The elec
Publikováno v:
The Conference Record of the Twenty-Second IEEE Photovoltaic Specialists Conference - 1991.
Using a detailed simulation model of p/sup +/nn/sup +/ and n/sup +/pp/sup +/ indium phosphide (InP) homojunction solar cells, the authors have conducted extensive parametric variation computer simulation runs to help arrive at near-optimum designs of
Publikováno v:
IEEE Conference on Photovoltaic Specialists.
The problem of the presently obtained best open-circuit voltage (V/sub oc/) values of n/sup +/pp/sup +/ InP solar cells being considerably smaller than those predicted by basic theory is theoretically investigated. The values of some key parameters i
Autor:
D. R. Wheeler, Dennis J. Flood, Mircea Faur, G. Mateescu, J. Faulk, M. Goradia, David J. Brinker, D.A. Scheiman, Chandra Goradia, S. A. Alterovitz, Sheila G. Bailey
Publikováno v:
Conference Record of the Twenty Sixth IEEE Photovoltaic Specialists Conference - 1997.
We demonstrate the effectiveness of using wet chemical techniques for Si and Ge planar surfaces to form nanoporous layers, and grow stable passivating oxide layers on planar and porous surfaces, after the front grid metallization step. Our results sh
Autor:
Irving Weinberg, M. Goradia, Carlos Vargas-Aburto, Dennis J. Flood, Mircea Faur, Chandra Goradia
Publikováno v:
Conference Record of the Twenty Third IEEE Photovoltaic Specialists Conference - 1993 (Cat. No.93CH3283-9).
On bare p/sup +/n (Cd,S) InP diffused solar cells, the authors recorded AMO, 25/spl deg/C V/sub oc/ values exceeding 880 mV. In this work they present some of their most recent results showing much lower carrier removal rates in the emitter of p/sup
Publikováno v:
LEOS 1992 Summer Topical Meeting Digest on Broadband Analog and Digital Optoelectronics, Optical Multiple Access Networks, Integrated Optoelectronics, and Smart Pixels.
A significant reduction of defect densities of n/sup +/p and p/sup +/n InP structures fabricated by closed-ampoule thermal diffusion was obtained after optimizing the diffusion process. For n/sup +/p structures, the lowest etch pit density (EPD) of 6
Publikováno v:
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials.
Cd diffusion and Zn diffusion into n-InP:S (N/sub D/ =3.5*10/sup 16/ and 4.5*10/sup 17/ cm/sup -3/) were performed by a closed ampoule technique at diffusion temperatures from 500 to 600 degrees C by using either high-purity Cd and Zn or Cd/sub 3/P/s
Autor:
Ralph O. Clark, Mircea Faur, Maria Faur, Chandra Goradia, M. Goradia, Frank S. Honecy, Douglas Jayne
Publikováno v:
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures. 10:1277
In order to optimize the fabrication of n(+)-p InP solar cells made by closed-ampoule diffusion of sulfur into p-InP:Cd substrates, we have investigated the influence of diffusion conditions on sulfur diffusion profiles. We show that S diffusion in I
Autor:
Chandra Goradia, Manju Ghalla-Goradia
Publikováno v:
Solar Cells. 16:611-630
A theoretical model is presented which allows the fitting of calculated results to both dark and illuminated current versus voltage characteristics at several temperatures above 300 K for two relatively high efficiency Boeing (Cd,Zn)S/CuInSe2 thin fi
Autor:
Chandra Goradia, Irving Weinberg
Publikováno v:
Journal of Applied Physics. 57:4752-4760
Particulate radiation in space is a principal source of silicon solar cell degradation, and an investigation of cell radiation damage at higher base resistivities appears to have implication toward increasing solar cell and, therefore, useful satelli