Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Chandra, Jagadeesh SV"'
Publikováno v:
IndraStra Global.
DC reactive magnetron sputtering technique was employed for deposition of titanium dioxide (TiO2) films. The films were formed on Corning glass and p-Si (100) substrates by sputtering of titanium target in an oxygen partial pressure of 6x10-2 Pa and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::f35fbc6b1e52ddb02798f1fa363fef8c
https://igi.indrastra.com/items/show/210008
https://igi.indrastra.com/items/show/210008
Publikováno v:
IndraStra Global.
Tantalum oxide (Ta2O5) films were formed on silicon (111) and quartz substrates by dc reactive magnetron sputtering of tantalum target in the presence of oxygen and argon gases mixture. The influence of substrate bias voltage on the chemical binding
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::87009bb3cf147904054de31d39f2648e
https://igi.indrastra.com/items/show/206517
https://igi.indrastra.com/items/show/206517
Publikováno v:
IndraStra Global.
dc reactive magnetron sputtering technique was employed for deposition of tantalum oxide films on quartz and silicon substrates by sputtering of pure tantalum target in the presence of oxygen and argon gases under various substrate temperatures in th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::a19f447523750a7f430d33fe5aca8728
https://igi.indrastra.com/items/show/205635
https://igi.indrastra.com/items/show/205635
Publikováno v:
IndraStra Global.
Rf magnetron sputtering technique was employed for preparation of tantalum oxide films on quartz and crystalline silicon (111) substrates held at room temperature by sputtering of tantalum in an oxygen partial pressure of $1X10^{-4} mbar$. The films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=issn23813652::ff132c76adf3700a5f938eed3f633d11
http://eprints.iisc.ac.in/14078/1/heat_trmnt.pdf
http://eprints.iisc.ac.in/14078/1/heat_trmnt.pdf