Zobrazeno 1 - 10
of 28
pro vyhledávání: '"Chando Park"'
Autor:
Youguang Zhang, Zilu Wang, Kaihua Cao, Tianrui Zhang, Daoqian Zhu, Weisheng Zhao, Albert Fert, Mengxing Wang, Zhengyang Zhao, Jimmy Kan, Jian-Ping Wang, Zhaohao Wang, Wenlong Cai, Chando Park
Publikováno v:
Nature Electronics. 1:582-588
Magnetization switching in magnetic tunnel junctions using spin-transfer torque and spin–orbit torque is key to the development of future spintronic memories. However, both switching mechanisms suffer from intrinsic limitations. In particular, the
Autor:
Yuan Xie, Yuanqing Cheng, Chando Park, Bi Wu, Peiyuan Wang, Jimmy Kan, Beibei Zhang, Seung H. Kang, Linuo Xue
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 26:484-495
The STT-MRAM technology is a promising candidate for future on-chip cache memory because of its high density, low standby power, and nonvolatility. As the technology node scales, especially under 40-nm technology node, STT-MRAM cell design becomes a
Publikováno v:
IEEE Transactions on Electron Devices. 64:3639-3646
Magnetic tunnel junctions integrated for spin-transfer torque magnetoresistive random-access memory are by far the only known solid-state memory element that can realize a combination of fast read/write speed and high endurance. This paper presents a
Autor:
C. Ching, Mahendra Pakala, S. Kim, Lin Xue, Liang Shurong, Chando Park, Jimmy Kan, Seung H. Kang, A. Kontos, S. Hassan, Wang Rongjun, Mangesh Bangar, Jaesoo Ahn, H. Chen
Publikováno v:
IEEE Transactions on Magnetics. 53:1-4
This paper investigates the temperature-dependent behaviors of critical device parameters in 1 Gb perpendicular magnetic tunnel junction (pMTJ) arrays from 25 °C to 125 °C. Despite the fact that pMTJ (45-50 nm in diameter) attributes are generally
Publikováno v:
IEEE Transactions on Magnetics. 51:1-5
In order to enable the spin-transfer torque (STT) magnetoresistive random access memory technologies, it is essential to control the thermal budget, perpendicular magnetic anisotropy, and magnetic damping parameter of perpendicular magnetic tunnel ju
Autor:
Seung H. Kang, Chando Park
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
MRAM, specifically, perpendicular spin-transfer-torque (STT) MRAM, has reached a stage to serve early adopters. With its unique attributes and tunability, MRAM can create desirable system differentiations which were not possible due to inherent limit
Autor:
Jaesoo Ahn, Jimmy Kan, Lin Xue, A. Kontos, Seung H. Kang, Mangesh Bangar, S. Kim, H. Chen, Chando Park, S. Hassan, Wang Rongjun, C. Ching, Liang Shurong, Mahendra Pakala
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
We present a comprehensive device and scalability validation of STT-MRAM for high performance applications in sub-10 nm CMOS by providing the first statistical account of barrier reliability in perpendicular magnetic tunnel junctions (pMTJs) from 70
Autor:
Seung H. Kang, Matthias Georg Gottwald, Jimmy Kan, A. Kontos, H. Chen, C. Ching, Mahendra Pakala, Lin Xue, Liang Shurong, Mangesh Bangar, Chando Park, Xiaochun Zhu, Jaesoo Ahn, S. Hassan, Wang Rongjun
Publikováno v:
2015 IEEE International Electron Devices Meeting (IEDM).
This paper demonstrates the co-optimization of all critical device parameters of perpendicular magnetic tunnel junctions (pMTJ) in 1 Gbit arrays with an equivalent bitcell size of 22 F2 at the 28 nm logic node for embedded STT-MRAM. Through thin-film
Publikováno v:
IEEE Transactions on Magnetics. 44:2577-2580
Low-resistance magnetic tunnel junctions utilizing perpendicular magnetic anisotropy of Co/Pt multilayer electrodes have been investigated. In these junctions, AlOx tunnel barrier has been prepared by repeated natural oxidation processes. Each natura
Autor:
Jian-Gang Zhu, Chando Park
Publikováno v:
Materials Today. 9(11):36-45
Fueled by the ever-increasing demand for larger hard disk drive storage capacities, extensive research over the past decade has resulted in the development of AlO x - and TiO x -based magnetic tunnel junctions that exhibit a large magnetoresistive ef