Zobrazeno 1 - 10
of 45
pro vyhledávání: '"Chan-Yong Jeong"'
Publikováno v:
IEEE Electron Device Letters. 38:473-476
In this letter, we report on the charge transport mechanism in the p-type tin monoxide (SnO) thin-film transistors (TFTs) over a wide range of operation regimes and temperatures. From the temperature-dependent field-effect conductance measurements, t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a6f357e67fd929137d431861a9288e30
https://doi.org/10.1109/led.2017.2672730
https://doi.org/10.1109/led.2017.2672730
Determination of Interface and Bulk Trap Densities in High-Mobility p-type WSe2Thin-Film Transistors
Publikováno v:
IEEE Electron Device Letters. 38:481-484
In this letter, the energy distributions of the interface and bulk trap densities were separately determined in p-type tungsten diselenide (WSe2) thin-film transistors (TFTs) by measuring and analyzing the subthreshold transfer characteristics and sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1454ec6a9fe157d91bb0423d5f48acbb
https://doi.org/10.1109/led.2017.2673854
https://doi.org/10.1109/led.2017.2673854
Autor:
Hee-Joong Kim, Hyuck-In Kwon, Jong-Baek Seon, Chan-Yong Jeong, Dae Hwan Kim, Dae-Hwan Kim, Tae Sang Kim, Hyun-Suk Kim, Sunhee Lee
Publikováno v:
IEEE Electron Device Letters. 37:1570-1573
In this letter, the carrier transport mechanism in a high-mobility zinc oxynitride (ZnON) thin-film transistor (TFT) is investigated by analyzing the gate bias and temperature dependence of conductance and intrinsic field-effect mobility ( $\mu _{\ma
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::692db8b6e500711cec5d83964a90a9da
https://doi.org/10.1109/led.2016.2619684
https://doi.org/10.1109/led.2016.2619684
Publikováno v:
Journal of Nanoscience and Nanotechnology. 16:11381-11385
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0a5b8c01cbbe219aeadad9225762fbff
https://doi.org/10.1166/jnn.2016.13513
https://doi.org/10.1166/jnn.2016.13513
Autor:
Kwanpyo Kim, Jingu Kang, Hyuck-In Kwon, Sungkyu Kim, Jae Sang Heo, Jaekyun Kim, Jeong-Wan Jo, Sung Kyu Park, Hu Young Jeong, Myung-Gil Kim, Yong-Hoon Kim, Chan Yong Jeong
Publikováno v:
ACS Applied Materials & Interfaces. 8:10403-10412
The low-temperature electrical passivation of an amorphous oxide semiconductor (AOS) thin-film transistor (TFT) is achieved by a deep ultraviolet (DUV) light irradiation-water treatment-DUV irradiation (DWD) method. The water treatment of the first D
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::310e7d48b307973f9edd91a5a6e79b8d
https://doi.org/10.1021/acsami.5b12819
https://doi.org/10.1021/acsami.5b12819
Publikováno v:
IEEE Electron Device Letters. 37:295-298
We investigated the effects of illumination and bias illumination stresses on the electrical performance of p-type tin monoxide (SnO) thin-film transistors (TFTs). The transfer curve shifts in the positive direction with an increase of the subthresho
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecdf4b1ff758cb522267a0a98d8fa252
https://doi.org/10.1109/led.2016.2516578
https://doi.org/10.1109/led.2016.2516578
Publikováno v:
IEEE Electron Device Letters. 36:1332-1335
We investigated the low-frequency noise (LFN) properties of double-gate (DG) amorphous indium–gallium–zinc oxide (a-IGZO) thin-film transistors (TFTs). The LFN from all of the DG, top-gate (TG), and bottom-gate (BG) operation modes was well expla
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::769bb90b110b85250656981e506079a4
https://doi.org/10.1109/led.2015.2489223
https://doi.org/10.1109/led.2015.2489223
Publikováno v:
Journal of the Korean Physical Society. 66:744-747
We compared the displacement sensitivity between the first two symmetrical flexural resonant modes of a tuning fork crystal oscillator. An optical chopping method was employed to detect the vibrational modes of the tuning fork. Displacement sensitivi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2dd9d8083e7a35899b064aa859f35f83
https://doi.org/10.3938/jkps.66.744
https://doi.org/10.3938/jkps.66.744
Publikováno v:
Journal of Nanoelectronics and Optoelectronics. 9:67-70
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bf7cad09d42be34cffae8cfb8a4b141c
https://doi.org/10.1166/jno.2014.1549
https://doi.org/10.1166/jno.2014.1549
Autor:
Mi Seon Seo, Keum Dong Jung, Daeun Lee, Kim Tae Young, Jong-Ho Lee, Hyuck-In Kwon, Jong-In Kim, Je-Hun Lee, In-Tak Cho, Mun Soo Park, Chan-Yong Jeong
Publikováno v:
IEEE Electron Device Letters. 36:579-581
Local degradation caused by drain bias ( $V_{\mathrm {\mathbf {DS}}}$ ) stressing is recently considered as a key issue in amorphous InGaZnO (a-IGZO) thin film transistors (TFTs). In this letter, we investigate the instability of turned-OFF a-IGZO TF
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6056b6559426a8120c3caa2ab42303b9
https://doi.org/10.1109/led.2015.2424966
https://doi.org/10.1109/led.2015.2424966