Zobrazeno 1 - 10 of 70 pro vyhledávání: '"Chan-Hyeong Park"'
1
Generation–recombination noise in uniformly doped semiconductors with contacts of finite surface recombination velocities
Autor: Chan Hyeong Park
Publikováno v: Journal of Applied Physics. 132:214501
The formula for the voltage noise spectrum due to generation–recombination (G–R) rate fluctuations is derived for uniformly doped majority-carrier n-type semiconductor samples with contacts of finite surface recombination velocities. In the deriv
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f3da178d40179d9c2246f12cd4e4b13a
https://doi.org/10.1063/5.0111954
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3
Simulation Analysis of the Variability of MOSFET Threshold Voltage and Current on Channel Width
Autor: Chan Hyeong Park
Publikováno v: Journal of the Institute of Electronics and Information Engineers. 55:13-19
짧은 채널 길이와 긴 채널 너비를 갖는 MOSFET은 너비 방향으로 불균일한 채널 불순물 농도를 갖게 되며, 이에 의해 너비 방향으로 각 지점에서의 MOSFET 채널은 서로 다른 값의 문턱전압을 갖
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e71ffa62e3b2500e5b06318232dfaa75
https://doi.org/10.5573/ieie.2018.55.6.13
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4
Action Game with Automatic Background Music Generation Using Genetic Algorithm
Autor: Chae-Bong Sohn, Chan Hyeong Park, Soo Young Cho, Dae yeol Kim
Publikováno v: Korean Society for Computer Game. 29:99-106
The genetic algorithm (GA), one of the artificial intelligence (AI), is developed based on Darwin"s theory of evolution, i.e., the mating of randomly selected objects. If more optimal solution is generated, then it is better to repeat the process of
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5b47a23d28c727e61f33195978986b5b
https://doi.org/10.21493/kscg.2016.29.2.99
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5
Modeling of Electrolyte Thermal Noise in Electrolyte-Oxide-Semiconductor Field-Effect Transistors
Autor: In-Young Chung, Chan Hyeong Park
Publikováno v: JSTS:Journal of Semiconductor Technology and Science. 16:106-111
Thermal noise generated in the electrolyte is modeled for the electrolyte-oxide-semiconductor field-effect transistors. Two noise sources contribute to output noise currents. One is the thermal noise generated in the bulk electrolyte region, and the
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5d1f566b407f576382bc40e0f83a599f
https://doi.org/10.5573/jsts.2016.16.1.106
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6
Analysis of Sensing Mechanisms in a Gold-Decorated SWNT Network DNA Biosensor
Autor: Chan Hyeong Park, Jin-Hong Ahn, Jung Woo Ko, Seok Hyang Kim, Young June Park, Jaeheung Lim
Publikováno v: JSTS:Journal of Semiconductor Technology and Science. 14:153-162
We show that carbon nanotube sensors with gold particles on the single-walled carbon nanotube (SWNT) network operate as Schottky barrier transistors, in which transistor action occurs primarily by varying the resistance of Au-SWNT junction rather tha
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5bc5b9020f378eb46924c42e757438e
https://doi.org/10.5573/jsts.2014.14.2.153
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7
Formulas of 1/f noise in Schottky barrier diodes under reverse bias
Autor: Jong-Ho Lee, Chan Hyeong Park
Publikováno v: Solid-State Electronics. 69:85-88
This paper presents the formulas of 1/f noise in Schottky barrier diodes under reverse bias condition. The derived formulas show that the electron density near the metal–semiconductor interface plays an important role in determining the power spect
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5832cd656eae656b79b25f40cbf63357
https://doi.org/10.1016/j.sse.2011.11.030
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8
Generation-recombination voltage noise spectrum in uniformly doped majority-carrier semiconductor samples
Autor: In-Young Chung, Chan Hyeong Park
Publikováno v: Journal of Applied Physics. 124:164502
The formula for the voltage noise spectrum due to generation-recombination (G-R) rate fluctuations is derived for uniformly doped majority-carrier n-type semiconductor samples. In the derivation of the formula, the ohmic boundary condition is used to
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a195471b19149a4faed906ad22b49326
https://doi.org/10.1063/1.5044699
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9
Physics-Based Analysis and Simulation of $\hbox{1}/f$ Noise in MOSFETs Under Large-Signal Operation
Autor: Hong Shick Min, Young June Park, Chan Hyeong Park, Sung-Min Hong
Publikováno v: IEEE Transactions on Electron Devices. 57:1110-1118
This paper presents a study on 1/f noise in MOSFETs under large-signal (LS) operation, which is important in CMOS analog and RF integrated circuits. The flicker noise is modeled with noise sources as a perturbation in the semiconductor equations empl
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::999a74263ee4e35b8113e2a744341680
https://doi.org/10.1109/ted.2010.2043186
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10
Wideband impedance-transforming three-port power divider using lumped elements
Autor: In-Young Chung, Jinho Jeong, Seung‐Hyun Cho, Chan Hyeong Park
Publikováno v: Microwave and Optical Technology Letters. 51:2570-2573
In this article, we propose a new wideband impedance-transforming three-port power divider using lumped elements. Instead of a π-network used in the conventional lumped Wilkinson power divider, an L-type matching network is employed in the new desig
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::99e54093a14ece08675ec2d616406054
https://doi.org/10.1002/mop.24675
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