Zobrazeno 1 - 10
of 180
pro vyhledávání: '"Chan Ho Yang"'
Autor:
Young Jin Jeong, Do Gyeom Jeong, Hwiin Ju, In Hyeok Choi, Chang Jae Roh, Jin Hong Lee, Chan-Ho Yang, Jong Seok Lee
Publikováno v:
Scientific Reports, Vol 14, Iss 1, Pp 1-7 (2024)
Abstract We investigated the multi-domain states of a multiferroic La-doped BiFeO3 (BLFO) thin film by examining diffraction patterns in optical second-harmonic generation (SHG) measurement. By directing a laser onto the domain wall within the domain
Externí odkaz:
https://doaj.org/article/6bed2b7ade8d43a699228a61d7f55561
Autor:
Youngki Yeo, Jihun Kim, Jeonghun Suh, Jinhyuk Jang, Kyungrok Kang, Peggy Schoenherr, Kwang‐Tak Kim, Yong‐Jin Kim, Kee Hoon Kim, Clemens Ulrich, Jan Seidel, Si‐Young Choi, Chan‐Ho Yang
Publikováno v:
Advanced Materials Interfaces, Vol 11, Iss 24, Pp n/a-n/a (2024)
Abstract Lattice defects such as oxygen vacancies, interstitials, and their complexes are present in crystalline oxide materials. In particular, anti‐Frenkel defects, which refer to charge‐neutral anion vacancy‐interstitial pairs, are strongly
Externí odkaz:
https://doaj.org/article/f02d5ba02b6249219e8775c74fb6f068
Autor:
Jaeun Eom, In Hak Lee, Jung Yun Kee, Minhyun Cho, Jeongdae Seo, Hoyoung Suh, Hyung-Jin Choi, Yumin Sim, Shuzhang Chen, Hye Jung Chang, Seung-Hyub Baek, Cedomir Petrovic, Hyejin Ryu, Chaun Jang, Young Duck Kim, Chan-Ho Yang, Maeng-Je Seong, Jin Hong Lee, Se Young Park, Jun Woo Choi
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-10 (2023)
Abstract We investigate the voltage control of magnetism in a van der Waals (vdW) heterostructure device consisting of two distinct vdW materials, the ferromagnetic Fe3-x GeTe2 and the ferroelectric In2Se3. It is observed that gate voltages applied t
Externí odkaz:
https://doaj.org/article/2dd6f42996c94562b27f0b226838c453
Autor:
Ji Soo Lim, Ho-Hyun Nahm, Marco Campanini, Jounghee Lee, Yong-Jin Kim, Heung-Sik Park, Jeonghun Suh, Jun Jung, Yongsoo Yang, Tae Yeong Koo, Marta D. Rossell, Yong-Hyun Kim, Chan-Ho Yang
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-10 (2022)
Phase transition points can be used to reduce the ionic migration activation energy. Here, the authors find a lowered activation energy associated with oxygen transport at a compositional phase transition point in Ca-doped bismuth ferrite films.
Externí odkaz:
https://doaj.org/article/a56f3da095494734a74f47c4abac64d1
Autor:
Lin, Kuen-Song, Mdlovu, Ndumiso Vukile, Chan, Ho-Yang, Wu, Kevin Chia-Wen, Wu, Jeffrey Chi-Sheng, Huang, Yu-Tzu
Publikováno v:
In Catalysis Today 1 August 2022 397-399:145-154
Publikováno v:
npj Quantum Materials, Vol 6, Iss 1, Pp 1-11 (2021)
Abstract The Jahn–Teller (JT) effect, through geometric deformation of molecules or local ionic lattices, lowers the overall energy of the system by removing electron degeneracy from partially occupied orbitals. Crystal symmetry lowered by JT disto
Externí odkaz:
https://doaj.org/article/e2a9538dc271440d9014aa49cf3d795e
Autor:
Shinhee Yun, Kyung Song, Kanghyun Chu, Soo-Yoon Hwang, Gi-Yeop Kim, Jeongdae Seo, Chang-Su Woo, Si-Young Choi, Chan-Ho Yang
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-10 (2020)
Observation of a strain-gradient-induced piezoresponse at domain walls remains a challenge. Here, the authors find the piezoelectric response to be enhanced in the ferroelastic domain walls of centrosymmetric tungsten trioxide thin films due to a lar
Externí odkaz:
https://doaj.org/article/a40e15cd37e44a67b81b40e3e790dfb5
Publikováno v:
Scientific Reports, Vol 10, Iss 1, Pp 1-10 (2020)
Abstract The superconductor-insulator transition induced by film thickness control is investigated for the optimally doped cuprate superconductor La1.85Sr0.15CuO4. Epitaxial thin films are grown on an almost exactly matched substrate LaAlO3 (001). De
Externí odkaz:
https://doaj.org/article/a929bcd5ffaa45e5aa7a4708a0e7b6bf
Autor:
Yong-Jun Kwon, Youngki Yeo, Min-Su Kim, Yong-Jin Kim, Heung-Sik Park, Jaegyu Kim, Si-Young Choi, Chan-Ho Yang
Publikováno v:
Nano Letters. 23:4557-4563
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b12131a35829e4a5814f9f32cef4f35
https://doi.org/10.1021/acs.nanolett.3c01009
https://doi.org/10.1021/acs.nanolett.3c01009
Autor:
Hyeon Jun Lee, Jeongyong Kim, Seung Hyun Hwang, Hyeokmin Choe, Semen Gorfman, Yeong-Jae Heo, Su Yong Lee, Pierre-Eymeric Janolin, Igor Kornev, Tobias U. Schülli, Carsten Richter, Joo-Hyoung Lee, Ullrich Pietsch, Chan-Ho Yang, Ji Young Jo
Publikováno v:
APL Materials, Vol 8, Iss 10, Pp 101110-101110-7 (2020)
Electric-field-driven phase transformation phenomena in multiferroic BiFeO3 are directly linked to the functionalities of electronic devices based on multiferroic materials. Understanding how the transformation evolves at the nanoscale under the infl
Externí odkaz:
https://doaj.org/article/54382f55c87a4ea99cb27c64196eb362