Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Chan Ching Chang"'
Autor:
Kuo Hsi Yen, Jenn-Fang Chen, Ching Chieh Shih, Yeong Shyang Lee, Ming Ta Hsieh, Hsiao-Wen Zan, Chih Hsien Chen, Chan Ching Chang
Publikováno v:
Japanese Journal of Applied Physics. 47:8714-8718
Detailed admittance spectroscopy was performed on a metal–silicon nitride–hydrogenated amorphous silicon (MIAS) structure. On the basis of the properties of hydrogenated amorphous silicon (a-Si:H), three simplified equivalent circuit models under
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4e8f827c3c2460aafd1f931423dda301
https://doi.org/10.1143/jjap.47.8714
https://doi.org/10.1143/jjap.47.8714
Autor:
Chan, Ching-Chang, 詹錦昌
97
This paper analyzes the system behavior of the mobile service industry in Taiwan from 1998 to 2008. This research uses System Dynamics approach to construct Taiwan’s mobile service industry operating model via six subsystems, including the
This paper analyzes the system behavior of the mobile service industry in Taiwan from 1998 to 2008. This research uses System Dynamics approach to construct Taiwan’s mobile service industry operating model via six subsystems, including the
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/00448985811528258900
Autor:
Chan-Ching Chang, 張展晴
94
In this thesis, we report on the fabrication of multilayer organic light emitting diodes (OLEDs) with high electroluminescent (EL) yield by integrating two units of green and whit emissive devices in series. We also demonstrate p-i-n organic
In this thesis, we report on the fabrication of multilayer organic light emitting diodes (OLEDs) with high electroluminescent (EL) yield by integrating two units of green and whit emissive devices in series. We also demonstrate p-i-n organic
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/v5dmyp
Autor:
Chan-Ching Chang, 張展晴
88
The purpose of this thesis is to study some important issues for Zn ion implantation. Three primary issues are studied: structure damage caused by ion implantation, activated as the p-type GaN by rapid thermal annealing (RTA) and furnace trea
The purpose of this thesis is to study some important issues for Zn ion implantation. Three primary issues are studied: structure damage caused by ion implantation, activated as the p-type GaN by rapid thermal annealing (RTA) and furnace trea
Externí odkaz:
http://ndltd.ncl.edu.tw/handle/55049772533441687137
Publikováno v:
Analytical Sciences: X-ray Structure Analysis Online. 20:X37-X38
Tris(5-N-ethylanilinesulfonamide-8-quinolato)aluminum(III), Al(Saq)3, was crystallized in P21/c with a = 17.952(3)A, b = 17.716(3)A, c = 17.080(3)A, β = 99.895(4)°, V = 5351.5(16)A3, Z = 4. The tris-chelate of Al(Saq)3 has a symmetry of C1 and a ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c44da505260692130d18d6db4e3a764c
https://doi.org/10.2116/analscix.20.x37
https://doi.org/10.2116/analscix.20.x37
Autor:
Yi-Ya Tseng, Chan-Ching Chang, Kun-Fu Huang, Chih-Yuan Hou, Ya-Hui Peng, Chih Hsien Chen, Yeong-Shyang Lee, Tzung-Shi Huang
Publikováno v:
SID Symposium Digest of Technical Papers. 39:333
A 32-inch microcrystalline silicon thin film transistor liquid crystal display was manufactured on 1500×1850 mm2 (G6) glass substrate. We have successfully deposited non-porous and highly crystalline microcrystalline silicon film with interfacial tr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bfe3c4d05a55a2906088b6cca152f9b1
https://doi.org/10.1889/1.3069662
https://doi.org/10.1889/1.3069662
Akademický článek
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Publikováno v:
Applied Physics Letters. 89:253504
In this letter, the authors demonstrate p-i-n organic light-emitting diodes (OLEDs) incorporating a p-doped transport layer which comprises tungsten oxide (WO3) and 4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (2-TNATA) to replace th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fd4efceb12c30e1f458adbff387de41b
https://doi.org/10.1063/1.2405856
https://doi.org/10.1063/1.2405856
Publikováno v:
Applied Physics Letters. 89:103510
The effect of tungsten oxide (WO3) incorporation into 1,4-bis[N-(1-naphthyl)-N′-phenylamino]-4,4′ diamine (NPB) layer is investigated in NPB-tris(8-hydroxyquinoline)aluminium heterojunction organic light-emitting diodes. The admittance spectrosco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20cdaa47475ba20f142d874ff1901bc3
https://doi.org/10.1063/1.2345610
https://doi.org/10.1063/1.2345610