Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Chan‐lon Yang"'
Autor:
Chan Lon Yang, Chin Cheng Chien, Stan Yu, Balasubramanian Ramachandran, J.Y. Wu, Chin I. Liao, Chun Yua Chen
Publikováno v:
ECS Transactions. 58:159-162
The selective Epi of high quality with the high Ge of >50% has been demonstrated. The high quality Epi morphology can be obtained by modulating the Epi temperature to < 600C. The diamond shape Epi film with dislocation free can be observed by TEM. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7b38895899d8b5597bcec7f09c7eab7b
https://doi.org/10.1149/05807.0159ecst
https://doi.org/10.1149/05807.0159ecst
Autor:
Keh-Ching Huang, Jinsong Tang, T. Fu, R. Kodali, Chan-Lon Yang, S. F. Tzou, V.C. Chang, Yonah Cho, Yi Cheng Chen, Hsiang-Ying Wang, L. Washington, Chin-Cheng Chien, Po-Lun Cheng, Chin-I Liao
Publikováno v:
Semiconductor Science and Technology. 22:S140-S143
Cyclical wet clean in DI-O 3 /SC1/DHF and low temperature bake in HCl/H 2 are presented as effective surface treatments for selective SiGe epitaxial deposition used to fabricate embedded SiGe pMOSFETs. The presented methods are most effective for dev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9d2f791db19a397d193a14d8ca6ab0e8
https://doi.org/10.1088/0268-1242/22/1/s33
https://doi.org/10.1088/0268-1242/22/1/s33
Autor:
Errol Antonio C. Sanchez, S. F. Tzou, Yonah Cho, Yi Cheng Chen, Tony Fu, Chan Lon Yang, Wen S. Hsu, Chin Cheng Chien, Vincent C Chang, Chin I. Liao, Hou Ren Wu, Po Lun Cheng, Jinsong Tang
Publikováno v:
ECS Transactions. 3:245-248
A thin layer (15A) of Si seed was employed to help nucleate low temperature selective SiGe epitaxial film in recessed source and drain. In combination with pre-epi wet clean and low temperature chemical bake, use of Si seed resulted in improved SiGe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3abb14ca3135690195248a5a079a05bc
https://doi.org/10.1149/1.2355817
https://doi.org/10.1149/1.2355817
Autor:
Samantha Tan, Ted Ming-Lang Guo, Chan Lon Yang, Kai Ping Wang, Autumn Yeh, Chin Cheng Chien, Michael Chan, Teh-Tien Su, Alex Kabansky, Jack Kao, J.Y. Wu, Zhi Jian Wang
Publikováno v:
Solid State Phenomena. 195:79-81
Chemical and physical modifications of photoresist and BARC during plasma patterning process on HKMG structure can cause residual defects and yield loss that challenges the subsequent wet cleaning process to resolve this issue. The chemical behavior
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb55c141e8394ab8d68c820a88601256
https://doi.org/10.4028/www.scientific.net/ssp.195.79
https://doi.org/10.4028/www.scientific.net/ssp.195.79
Novel chlorine-enriched SiO2/Si3N4 bilayers to downscale gate dielectrics toward sub-45nm and beyond
Autor:
Frank. C.C. Wang, J.Y. Wu, Michael Chan, Shao Wei Wang, Chan Lon Yang, Yu-Ren Wang, Charles Cl Lin, Tsuo Wen Lu
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
We have developed a low leakage and highly reliable SiON gate dielectrics by using novel low temperature deposition of chlorine-enriched silicon nitride upon a thin oxide. This method can achieve higher top-to-bottom nitrogen concentration ratio and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::004f955329fe6e09552ff6ae9ea4f1de
https://doi.org/10.1109/rtp.2010.5623791
https://doi.org/10.1109/rtp.2010.5623791
Autor:
Chan Lon Yang, Yu-Ren Wang, Frank Cc Huang, Michael Chan, Charles Cl Lin, Shao Wei Wang, J.Y. Wu
Publikováno v:
2010 18th International Conference on Advanced Thermal Processing of Semiconductors (RTP).
High temperature RTO (Rapid Thermal Oxidation) process can get good quality but growth rate was too fast to get a controllable ultra-thin SiO 2 as interfacial layer (IL) for high-K gate dielectrics application. In this paper, we investigated the phys
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6bcc7b435c69988165a35b2f1e6640d9
https://doi.org/10.1109/rtp.2010.5623796
https://doi.org/10.1109/rtp.2010.5623796
Publikováno v:
SPIE Proceedings.
In the 65nm process development, use traditional top-view SEM and off-line XSEM and TEM to monitor STI profile became insufficient and inefficient. How to find one non-destructive, in-line monitor method to monitor trench depth, step height, and micr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90c179560b17332f29c770ae74b4bbf5
https://doi.org/10.1117/12.656170
https://doi.org/10.1117/12.656170
Publikováno v:
SPIE Proceedings.
Chemical mechanical planarization (CMP) is a challenging process step for manufacturers implementing dual-damascene architectures at the 65 nm technology node. The polishing rate can vary significantly from wafer-to-wafer, across a single wafer, and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::14637daccc58f16b20d010f8ae69ea99
https://doi.org/10.1117/12.660205
https://doi.org/10.1117/12.660205
Autor:
Jack Jau, Wei-Yih Wu, Chan Lon Yang, Mingsheng Tsai, J. H. Yeh, S. F. Tzou, Y. D. Yang, Hong-Chi Wu, Shuen Cheng Lei, Hermes Liu, J. Y. Kao, Hong Xiao
Publikováno v:
SPIE Proceedings.
Dark voltage contrast (DVC) defects are detected on normally bright tungsten plugs (W-plugs) during the in-line e-beam inspection step. Cross-sectional scanning electron microscope (SEM) and transmission electron microscope (TEM) in a failure analysi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bda6649296264c95f18f3929727e1d77
https://doi.org/10.1117/12.656217
https://doi.org/10.1117/12.656217
Autor:
Hean-Cheal Lee, Jinhan Choi, Hanna Bamnolker, Chan-Lon Yang, Roni Khen, Yan Du, Shashank C. Deshmukh, Meihua Shen, Tito Chowdhury
Publikováno v:
Advances in Resist Technology and Processing XX.
193nm lithography has become increasingly important as the critical dimensions of semiconductor devices continue to scale down towards sub 0.10um dimension. From dry etching perspective, however, 193nm resist brings new challenges due to its poorer p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::90975c3a7996acfd884fd8043d370490
https://doi.org/10.1117/12.485151
https://doi.org/10.1117/12.485151