Zobrazeno 1 - 10
of 128
pro vyhledávání: '"Chalker, PR"'
Autor:
Massabuau, FCP, Adams, F, Nicol, D, Jarman, JC, Frentrup, M, Roberts, JW, O’Hanlon, TJ, Kovács, A, Chalker, PR, Oliver, RA
The structural, chemical and electrical properties of Ni/Au contacts to the atomic layer deposited α-Ga2O3 were investigated. Ni forms a Schottky contact with α-Ga2O3, irrespectively of the post-annealing temperature. No sign of metal oxidation was
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::afb4f6932413b089dcca4ae2a827a68d
Autor:
Tekin, SB, Das, P, Weerakkody, AD, Sedghi, N, Hall, S, Mitrovic, IZ, Werner, M, Wrench, JS, Chalker, PR, IEEE
Publikováno v:
2020 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS)
Metal Insulator Metal (MIM) and MI3M rectifiers have been fabricated by atomic layer deposition (ALD) to investigate the insulator (Al 2 O 3 , Ta 2 O 5 , Nb 2 O 5 ) layer quality and rectification performance for inclusion in rectenna arrays for infr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::70f440e33480644e660a9ffbb3246ad9
Autor:
Tekin, Serdar, Das, P, Weerakkody, AD, Sedghi, Naser, Hall, S, Mitrovic, IZ, Werner, M, Wrench, JS, Chalker, PR
Publikováno v:
Solid-State Electronics
Tunnel-barrier rectifiers comprising single and triple insulator configurations have been fabricated by atomic layer deposition (ALD) to investigate the insulator (Al2O3, Ta2O5, Nb2O5) layer quality and rectification performance for inclusion in rect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee38e1606f5d4f65f948d0583f1078b3
https://doi.org/10.1016/j.sse.2021.108096
https://doi.org/10.1016/j.sse.2021.108096
Autor:
Moloney, J, Tesh, O, Singh, M, Roberts, JW, Jarman, JC, Lee, LC, Huq, TN, Brister, J, Karboyan, S, Kuball, M, Chalker, PR, Oliver, RA, Massabuau, FCP
Low temperature atomic layer deposition was used to deposit α-Ga2O3 films, which were subsequently annealed at various temperatures and atmospheres. The α-Ga2O3 phase is stable up to 400 oC, which is also the temperature that yields the most intens
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f4d8da752d36184db8b0b83ceec3cba5
Autor:
Roberts, JW, Chalker, PR, Ding, B, Oliver, RA, Gibbon, JT, Jones, LAH, Dhanak, VR, Phillips, LJ, Major, JD, Massabuau, FCP
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::1c658174d0e1e32ea0e16f7886fd6daa
https://www.repository.cam.ac.uk/handle/1810/297309
https://www.repository.cam.ac.uk/handle/1810/297309
Autor:
Sedghi, N, Li, H, Brunell, IF, Dawson, K, Guo, Y, Potter, RJ, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Hall, S, Robertson, J, Chalker, PR
© 2017 Author(s). The effect of fluorine doping on the switching stability of Ta2O5 resistive random access memory devices is investigated. It shows that the dopant serves to increase the memory window and improve the stability of the resistive stat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______109::8a2a1d20102a804abaddcb639e5a0f85
https://www.repository.cam.ac.uk/handle/1810/274645
https://www.repository.cam.ac.uk/handle/1810/274645
Autor:
Sedghi, N, Li, H, Brunell, IF, Dawson, K, Potter, RJ, Guo, Y, Gibbon, JT, Dhanak, VR, Zhang, WD, Zhang, JF, Robertson, J, Hall, S, Chalker, PR
The role of nitrogen doping on the stability and memory window of resistive state switching in N-doped Ta2O5 deposited by atomic layer deposition is elucidated. Nitrogen incorporation increases the stability of resistive memory states which is attrib
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bbe5ea3c3842f4e4114ec2e9b70e792b
https://www.repository.cam.ac.uk/handle/1810/263219
https://www.repository.cam.ac.uk/handle/1810/263219
Publikováno v:
2016 JOINT INTERNATIONAL EUROSOI WORKSHOP AND INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (EUROSOI-ULIS 2016)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::88a3afdaf3393d9d044146df438e4dcb
Autor:
Mitrovic, IZ, Weerakkody, AD, Sedghi, N, Hall, S, Ralph, JF, Wrench, JS, Chalker, PR, Luo, Z, Beeby, S
Publikováno v:
DIELECTRICS FOR NANOSYSTEMS 7: MATERIALS SCIENCE, PROCESSING, RELIABILITY, AND MANUFACTURING
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=core_ac_uk__::2f41b9052d6f6ca7857d0ec9334c141d
http://livrepository.liverpool.ac.uk/3000980/1/Paper_70195_manuscript_17531_0.pdf
http://livrepository.liverpool.ac.uk/3000980/1/Paper_70195_manuscript_17531_0.pdf