Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Chaiyanan Kulchaisit"'
Autor:
Chaiyanan Kulchaisit, Juan Paolo Soria Bermundo, Mami N. Fujii, Yasuaki Ishikawa, Yukiharu Uraoka
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095001-095001-8 (2018)
We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibil
Externí odkaz:
https://doaj.org/article/7619257c801746c69b17454787c58c78
Autor:
Juan Paolo Bermundo, Dianne C. Corsino, Chaiyanan Kulchaisit, Aimi Syairah, Hiroshi Ikenoue, Yasuaki Ishikawa, Mami N. Fujii, Yukiharu Uraoka
Publikováno v:
SID Symposium Digest of Technical Papers. 50:422-425
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8a03034aea231e0358a83287c9ca8081
https://doi.org/10.1002/sdtp.12946
https://doi.org/10.1002/sdtp.12946
Autor:
Kenichi Hamada, Kei Tanaka, Masahiro Horita, Juan Paolo Bermundo, Yukiharu Uraoka, Hiromitsu Katsui, Miyasako Takaaki, Haruka Yamazaki, Yasuaki Ishikawa, Satoru Ishikawa, Mami N. Fujii, Chaiyanan Kulchaisit
Publikováno v:
Journal of Display Technology. 12:263-267
Amorphous indium gallium zinc oxide thin-film transistors have attracted growing interest due to its low energy consumption, possibility of low temperature fabrication and transparency. However, it still has technological problems on reliability and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e89d0a7589649670c2b6839b5d8a524
https://doi.org/10.1109/jdt.2015.2475127
https://doi.org/10.1109/jdt.2015.2475127
Autor:
Yukiharu Uraoka, Juan Paolo Bermundo, Mami N. Fujii, Chaiyanan Kulchaisit, Hiroshi Ikenoue, Yasuaki Ishikawa
Publikováno v:
Journal of Physics D: Applied Physics. 53:045102
We demonstrate the rapid (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9c007642287d91c1aeff17cf5ab6e02e
https://doi.org/10.1088/1361-6463/ab5085
https://doi.org/10.1088/1361-6463/ab5085
Publikováno v:
AIP Advances, Vol 8, Iss 9, Pp 095001-095001-8 (2018)
We demonstrated gate insulators (GI) fabricated by solution process with the aim of replacing traditional vacuum processed GI. We selected solution siloxane-based material due to its extremely high thermal resistance, excellent transparency, flexibil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fc50d6c1bafe002ff6600e46c141791b
https://doi.org/10.1063/1.5027276
https://doi.org/10.1063/1.5027276
Autor:
Masahiro Horita, Yukiharu Uraoka, Mami N. Fujii, Chaiyanan Kulchaisit, Juan Paolo Bermundo, Yoshihiro Ueoka, Yasuaki Ishikawa
Publikováno v:
2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).
We investigate the influence of polymer passivation on amorphous Indium Gallium Zinc Oxide (a-IGZO) TFT reliability. We made photosensitive siloxane passivation layer on bottom-gate type a-IGZO TFTs with SiO 2 /Si substrate. For photosensitive materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aee1abacf9c0f7cef75a5b8673641a00
https://doi.org/10.1109/imfedk.2014.6867088
https://doi.org/10.1109/imfedk.2014.6867088
Autor:
Juan Paolo S Bermundo, Chaiyanan Kulchaisit, Yasuaki Ishikawa, Mami N Fujii, Hiroshi Ikenoue, Yukiharu Uraoka
Publikováno v:
Journal of Physics D: Applied Physics; 1/23/2020, Vol. 53 Issue 4, p1-1, 1p