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pro vyhledávání: '"Chaiwon Woo"'
Autor:
Daniel Hessler, Ricardo Olivo, Tim Baldauf, Konrad Seidel, Raik Hoffmann, Chaiwon Woo, Maximilian Lederer, Yannick Raffel
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 7, Iss , Pp 100095- (2024)
This article reports an improvement in the low-frequency noise characteristics in hafnium oxide-based (HfO2) field-effect transistors by different precursor materials at ALD process. The Hafniumoxide on the devices were fabricated once with organic p
Externí odkaz:
https://doaj.org/article/f020b3fa7bcf48608bfe1a3e39669a37
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 6, Iss , Pp 100091- (2023)
In recent years, there has been significant progress in the development of high-κ materials in the semiconductor industry. Given that the contact between the channel and the electrode has a crucial impact on reliability, the selection of electrode m
Externí odkaz:
https://doaj.org/article/0b5ece34c5274717b5c4626b2b82bab3