Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications.

Autor: Tanner P; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia. P.Tanner@griffith.edu.au., Iacopi A; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia., Phan HP; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia., Dimitrijev S; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia.; School of Engineering, Griffith University, Queensland, 4111, Australia., Hold L; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia., Chaik K; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia., Walker G; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia., Dao DV; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia.; School of Engineering, Griffith University, Queensland, 4111, Australia., Nguyen NT; Queensland Micro and Nanotechnology Centre, Griffith University, Queensland, 4111, Australia.

Publikováno v: Scientific reports [Sci Rep] 2017 Dec 18; Vol. 7 (1), pp. 17734. Date of Electronic Publication: 2017 Dec 18.

Conduction mechanism and UV/visible photodetection properties of p-Si/n-SiC heterostructure.

Autor: Şakar, Betül Ceviz¹ (AUTHOR), Yıldırım, Fatma^1,2 (AUTHOR), Orhan, Zeynep^1,2 (AUTHOR), Aydoğan, Ş.² (AUTHOR) saydogan@atauni.edu.tr

Publikováno v: Optical & Quantum Electronics. Apr2023, Vol. 55 Issue 4, p1-15. 15p.

Synthesis of silicon carbide in a matrix of graphite-like carbon prepared via carbonization of rigid-rod polyimide Langmuir–Blodgett films on silicon substrate.

Autor: Goloudina, Svetlana, Pasyuta, Vyacheslav, Kirilenko, Demid, Smirnov, Aleksandr, Kasatkin, Igor, Zhizhin, Evgeny, Koroleva, Aleksandra, Sevostiyanov, Evgeny, Panov, Mikhail, Trushlyakova, Valentina, Gofman, Iosif, Svetlichnyi, Valentin, Luchinin, Viktor

Publikováno v: Nanotechnology; 6/24/2024, Vol. 35 Issue 26, p1-10, 10p

Synthesis of SiC Nanowires via Controllable Anodic Etching Time.

Autor: Chahrour, Khaled M.¹ (AUTHOR) chahrour@usm.my, Hashim, M. R.¹ (AUTHOR) roslan@usm.my

Publikováno v: Applied Physics A: Materials Science & Processing. Jul2020, Vol. 126 Issue 7, p1-8. 8p.

Effect of the Si doping on the properties of AZO/SiC/Si heterojunctions grown by low temperature pulsed laser deposition.

Autor: Boughelout, Abderrahmane, Macaluso, Roberto, Crupi, Isodiana, Megna, Bartolomeo, Brighet, Amer, Trari, Mohamed, Kechouane, Mohamed

Publikováno v: Semiconductor Science & Technology; Jan2021, Vol. 36 Issue 1, p1-10, 10p