Zobrazeno 1 - 10
of 36
pro vyhledávání: '"Chae Soo Kim"'
Autor:
Yeon-Joon Choi, Min-Hwi Kim, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee, Kyungho Hong, Chae Soo Kim, Sungjun Kim, Seongjae Cho, Byung-Gook Park
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://doaj.org/article/ddfa17aac0524a3c9faa17e4191ddceb
Autor:
Sung-min Kim, Chae-soo Kim
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 23:644-653
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::377bbca5b582693c4445c6936240a628
https://doi.org/10.5762/kais.2022.23.12.644
https://doi.org/10.5762/kais.2022.23.12.644
Autor:
Chae-Yoon Lim, Chae-Soo Kim
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 23:220-229
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1bf2ac698b4c027d30570a8b9345bd13
https://doi.org/10.5762/kais.2022.23.3.220
https://doi.org/10.5762/kais.2022.23.3.220
Autor:
Chae-Yoon Lim, Chae-Soo Kim
Publikováno v:
Journal of the Korea Academia-Industrial cooperation Society. 22:609-616
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::82c59285c383078185e6b441adf2a551
https://doi.org/10.5762/kais.2021.22.11.609
https://doi.org/10.5762/kais.2021.22.11.609
Publikováno v:
IEEE Transactions on Electron Devices. 68:1610-1615
We propose self-rectifying resistive random access memory (RRAM) synapse to prevent reverse leakage current problem which occurs when RRAM is integrated with integrate and fire (IF) circuit in spiking neural network (SNN). Ni/W/SiN x /n-Si RRAM was f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766155516641f8547837576325431d08
https://doi.org/10.1109/ted.2021.3059182
https://doi.org/10.1109/ted.2021.3059182
Publikováno v:
Journal of Nanoscience and Nanotechnology. 20:4735-4739
In this paper, we pose reverse leakage current issue which occurs when resistive random access memory (RRAM) is used as synapse for spiking neural networks (SNNs). To prevent this problem, 1 diode-1 RRAM (1D1R) synapse is suggested and simulated to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62637147cc500171f597ce55b0ba85a7
https://doi.org/10.1166/jnn.2020.17806
https://doi.org/10.1166/jnn.2020.17806
Autor:
Kyung Kyu Min, Sungjun Kim, Chae Soo Kim, Seongjae Cho, Yeon Joon Choi, Jae Yoon Lee, Byung-Gook Park, Min-Hwi Kim, Kyungho Hong, Suhyun Bang, Tae-Hyeon Kim, Dong Keun Lee
Publikováno v:
IEEE Transactions on Electron Devices. 67:1600-1605
In this article, we report a method for recovering a resistive-switching random access memory (RRAM) from the reset breakdown and enhancing the endurance characteristics. A SiN x -based RRAM device has been fabricated and its switching characteristic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3c88d4a596438a6c1c57163c9d703808
https://doi.org/10.1109/ted.2020.2976106
https://doi.org/10.1109/ted.2020.2976106
Autor:
Seongjae Cho, Tae-Hyeon Kim, Sungjun Kim, Dong Keun Lee, Byung-Gook Park, Suhyun Bang, Kyungho Hong, Yeon-Joon Choi, Min-Hwi Kim, Chae Soo Kim
Publikováno v:
IEEE Access, Vol 8, Pp 228720-228730 (2020)
In this study, the electrical characteristics of TiN/SiNx/TiN and TiN/Ag/SiNx/TiN RRAMs were thoroughly investigated through I-V measurements. Our novel Ag-inserted silicon nitride-based resistive switching memory (RRAM) achieved switching operation
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1fda4a5ba8cf3ede01bb2df83c8ce4bc
https://ieeexplore.ieee.org/document/9301470/
https://ieeexplore.ieee.org/document/9301470/
Autor:
Jaehun Sim, Chae-Soo Kim
Publikováno v:
Renewable Energy. 143:530-539
As one of the largest energy-consumption nations, the South Korean government has recently invested in the deployment and commercialization of various renewable energy sources to reduce the environmental impacts of fossil fuel-based energy sources. T
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::49cfbce7dbd8ceaebfe43fa12246b162
https://doi.org/10.1016/j.renene.2019.04.140
https://doi.org/10.1016/j.renene.2019.04.140
Publikováno v:
Journal of nanoscience and nanotechnology. 20(8)
In this paper, we pose reverse leakage current issue which occurs when resistive random access memory (RRAM) is used as synapse for spiking neural networks (SNNs). To prevent this problem, 1 diode-1 RRAM (1D1R) synapse is suggested and simulated to e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::f1abf42462c930522f8be2febb58fc83
https://pubmed.ncbi.nlm.nih.gov/32126649
https://pubmed.ncbi.nlm.nih.gov/32126649