Zobrazeno 1 - 10
of 797
pro vyhledávání: '"Chae B"'
Autor:
Qazilbash, M. M., Li, Z. Q., Podzorov, V., Brehm, M., Keilmann, F., Chae, B. G., Kim, H. T., Basov, D. N.
Publikováno v:
Applied Physics Letters 92, 241906 (2008)
We investigate the changes in the infrared response due to charge carriers introduced by electrostatic doping of the correlated insulator vanadium dioxide (VO2) integrated in the architecture of the field effect transistor. Accumulation of holes at t
Externí odkaz:
http://arxiv.org/abs/0806.4826
Autor:
Qazilbash, M. M., Schafgans, A. A., Burch, K. S., Yun, S. J., Chae, B. G., Kim, B. J., Kim, H. T., Basov, D. N.
Publikováno v:
Phys. Rev. B 77, 115121 (2008)
The optical/infrared properties of films of vanadium dioxide (VO2) and vanadium sesquioxide (V2O3) have been investigated via ellipsometry and near-normal incidence reflectance measurements from far infrared to ultraviolet frequencies. Significant ch
Externí odkaz:
http://arxiv.org/abs/0803.2739
Autor:
Qazilbash, M. M., Burch, K. S., Whisler, D., Shrekenhamer, D., Chae, B. G., Kim, H. T., Basov, D. N.
Publikováno v:
Physical Review B 74, 205118 (2006)
The metal-insulator transition and unconventional metallic transport in vanadium dioxide (VO$_2$) are investigated with a combination of spectroscopic ellipsometry and reflectance measurements. The data indicates that electronic correlations, not ele
Externí odkaz:
http://arxiv.org/abs/cond-mat/0611724
Autor:
Lim, Yong-Sik, Kim, Hyun-Tak, Chae, B. G., Youn, D. H., Kim, K. O., Kang, K. Y., Lee, S. J., Kim, K.
Publikováno v:
Appl. Phys. Lett. 86, 242101 (2005)
An abrupt first-order metal-insulator transition (MIT) without structural phase transition is first observed by current-voltage measurements and micro-Raman scattering experiments, when a DC electric field is applied to a Mott insulator VO_2 based tw
Externí odkaz:
http://arxiv.org/abs/cond-mat/0402485
The transition voltage of an abrupt metal-insulator transition (MIT), observed by applying an electric field to two-terminal devices fabricated on a Mott insulator VO_2 film, decreases with increasing temperature up to 334K. The abrupt current jump d
Externí odkaz:
http://arxiv.org/abs/cond-mat/0312083
We have grown VO2 thin films by laser ablation for electronic device applications. In obtaining the thin films of the pure VO2 phase, oxygen partial pressure is a critical parameter because vanadium oxides have several phases with the oxygen concentr
Externí odkaz:
http://arxiv.org/abs/cond-mat/0311616
Publikováno v:
New J. Phys. 6 (2004) 52
An abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT near a critical on-site Coulomb energy U/U_c=1 is observed for the first time in VO_2, a strongly correlated material, by inducing holes of about 0.018% into the c
Externí odkaz:
http://arxiv.org/abs/cond-mat/0308042
Publikováno v:
New J. Phys. 6 (2004) 52
For a strongly correlated material, VO2, near a critical on-site Coulomb energy U/Uc=1, the abrupt Mott metal-insulator transition (MIT) rather than the continuous Hubbard MIT is observed by inducing internal optical phonon-coupled holes (hole induci
Externí odkaz:
http://arxiv.org/abs/cond-mat/0305632
Publikováno v:
Appl. Phys. Lett. 75, 2135 (1999)
We investigate the fatigue and refreshment by dc-electrical field of the electrical properties of Pt/Pb(Ti,Zr)O$_3$/Pt ferroelectric capacitors. We find an asymmetry in the refreshment, that is, the fatigued state can be refreshed by application of n
Externí odkaz:
http://arxiv.org/abs/cond-mat/0210690
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