Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Chad M. Huard"'
Autor:
Shuo Huang, Prem Panneerchelvam, Chad M. Huard, Shyam Sridhar, Peter L. G. Ventzek, Mark D. Smith
Publikováno v:
Advanced Etch Technology and Process Integration for Nanopatterning XII.
Autor:
Prem Panneerchelvam, Ankur Agarwal, Chad M. Huard, Alessandro Vaglio Pret, Antonio Mani, Roel Gronheid, Marc Demand, Kaushik Kumar, Sara Paolillo, Frederic Lazzarino
Publikováno v:
Journal of Vacuum Science & Technology B. 40:062601
Quantitatively accurate, physics-based, computational modeling of etching and lithography processes is essential for modern semiconductor manufacturing. This paper presents lithography and etch models for a trilayer process in a back end of the line
Autor:
Nathan Shepherd, Wei Lu, Mikai Chen, Xiaogan Liang, Yifan Wang, Jiantao Zhou, Chad M. Huard, L. J. Guo
Publikováno v:
ACS Nano. 11:1091-1102
To construct reliable nanoelectronic devices based on emerging 2D layered semiconductors, we need to understand the charge-trapping processes in such devices. Additionally, the identified charge-trapping schemes in such layered materials could be fur
Publikováno v:
Journal of Materials Chemistry C. 3:1528-1536
A new type of highly stable, transparent and flexible hybrid electrode has been developed by integrating the encapsulation of a silver nanowires (AgNWs) network by polyvinyl alcohol (PVA) with a single-layer graphene on a flexible substrate. Compared
Publikováno v:
Advanced Optical Materials. 2:435-441
the LCD structure and leading to compact LC devices with thickness scales that are smaller than those currently used. In this communication, we demonstrate an ITO-free and more compact color LCD structure. The key to our design is the integration of
Autor:
In-Cheol Song, Shuo Huang, Siqing Lu, Chad M. Huard, Shim Seungbo, Mark J. Kushner, Sang Ki Nam
Publikováno v:
Journal of Vacuum Science & Technology A. 37:031304
Plasma etching of high aspect ratio (HAR) features, typically vias, is a critical step in the fabrication of high capacity memory. With aspect ratios (ARs) exceeding 50 (and approaching 100), maintaining critical dimensions (CDs) while eliminating or
Publikováno v:
Journal of Vacuum Science & Technology A. 36:06B101
The mechanism for atomic layer etching (ALE) typically consists of two sequential self-limited half-reactions—passivation and ion bombardment—which provide unique control over the process. Some of the possible benefits of this control include inc
Publikováno v:
Advanced Materials. 25:6554-6561
A novel nanofabrication methodology for continuous, scalable, and geometry-tunable lithography is developed, named photo-roll lithography (PRL), by integrating photolithography with rollable processing. As a flexible mask attached to a quartz cylinde
Autor:
Chad M. Huard, Alex Paterson, Yiting Zhang, Jun Belen, Saravanapriyan Sriraman, Mark J. Kushner
Publikováno v:
2016 IEEE International Conference on Plasma Science (ICOPS).
During reactive ion plasma etching (RIE) of semiconductor materials, a strong correlation between etch rate and feature size, or more specifically feature aspect ratio (AR), is often observed. There have been several analytical models proposed to exp
Publikováno v:
Journal of Physics D: Applied Physics. 51:155201
Atomic layer etching (ALE) typically divides the etching process into two self-limited reactions. One reaction passivates a single layer of material while the second preferentially removes the passivated layer. As such, under ideal conditions the waf