Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Chad M. Burke"'
Autor:
Roger Watkins, Robert Gauthier, Chad M. Burke, Evan Grund, Thomas Ming Swi Chang, Justin Katz
Publikováno v:
2018 40th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD).
Charged Device Model testing is confronted with high operating frequencies driving CDM to lower voltage levels and by high-density packages with ever smaller ball/pin pitches. A new CDM discharge head design meets these challenges by making DUT conta
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2b471899977feccddc6c2ea0c5f52e4
https://doi.org/10.23919/eos/esd.2018.8509749
https://doi.org/10.23919/eos/esd.2018.8509749
Publikováno v:
2016 IEEE International Reliability Physics Symposium (IRPS).
Technology scaling and driving to high performance have led to more joule heating in both devices and interconnects. Since temperature is one of the most sensitive factors impacting interconnect reliability, this paper focuses on the thermal characte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35e806468fbda76114d1bdd10c66aae9
https://doi.org/10.1109/irps.2016.7574547
https://doi.org/10.1109/irps.2016.7574547
Autor:
Craig Bocash, Ramachandran Muralidhar, Carole D. Graas, Fen Chen, Kai D. Feng, Chad M. Burke, M. Shinosky
Publikováno v:
IRPS
Voltage or Field acceleration model is crucial for low-k TDDB reliability study and lifetime projection. Over the years, many different acceleration models have been proposed based on different physics. In this paper, a method for a relatively fast s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::810de8bebe58be16de807c341d9dc336
https://doi.org/10.1109/irps.2015.7112697
https://doi.org/10.1109/irps.2015.7112697
Publikováno v:
2013 IEEE International Reliability Physics Symposium (IRPS).
Technology scaling has led to severe electromigration degradation for advanced interconnects. Taking full advantage of the Blech effect benefit has become more and more important for circuit design to overcome this EM performance degradation. Due to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::08764791ce6a4aa368fd8a4397da81c4
https://doi.org/10.1109/irps.2013.6532000
https://doi.org/10.1109/irps.2013.6532000
Autor:
Baozhen Li, Timothy D. Sullivan, R. Austin, D. Badami, Cathryn Christiansen, John M. Aitken, T. Lee, F. Chen, Matthew Angyal, Chad M. Burke, Jason Gill, M. Shinosky, W. Hasting
Publikováno v:
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
During the development and qualification of a 300mm low-k/Cu Back End of Line (BEOL) technology, the long-term reliability of such interconnects including low-k time-dependent dielectric breakdown (TDDB), Cu Electromigration (EM), Cu stress migration
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74479ef26b2d30b90121de9645aef5cf
https://doi.org/10.1109/ipfa.2006.251007
https://doi.org/10.1109/ipfa.2006.251007