Zobrazeno 1 - 10
of 149
pro vyhledávání: '"Chabak, Kelson"'
Autor:
Gong, Jiarui, Kim, Donghyeok, Jang, Hokyung, Alema, Fikadu, Wang, Qingxiao, Ng, Tien Khee, Qiu, Shuoyang, Zhou, Jie, Su, Xin, Lin, Qinchen, Singh, Ranveer, Abbasi, Haris, Chabak, Kelson, Jessen, Gregg, Cheung, Clincy, Gambin, Vincent, Pasayat, Shubhra S., Osinsky, Andrei, Boon, Ooi, S., Gupta, Chirag, Ma, Zhenqiang
The $\beta$-Ga$_2$O$_3$ has exceptional electronic properties with vast potential in power and RF electronics. Despite the excellent demonstrations of high-performance unipolar devices, the lack of p-type doping in $\beta$-Ga$_2$O$_3$ has hindered th
Externí odkaz:
http://arxiv.org/abs/2305.19138
Autor:
Azizie, Kathy, Hensling, Felix V. E., Gorsak, Cameron A., Kim, Yunjo, Dryden, Daniel M., Senevirathna, M. K. Indika, Coye, Selena, Shang, Shun-Li, Steele, Jacob, Vogt, Patrick, Parker, Nicholas A., Birkhölzer, Yorick A., McCandless, Jonathan P., Jena, Debdeep, Xing, Huili G., Liu, Zi-Kui, Williams, Michael D., Green, Andrew J., Chabak, Kelson, Neal, Adam T., Mou, Shin, Thompson, Michael O., Nair, Hari P., Schlom, Darrell G.
We report the use of suboxide molecular-beam epitaxy (S-MBE) to grow $\beta$-Ga$_2$O$_3$ at a growth rate of ~1 ${\mu}$m/h with control of the silicon doping concentration from 5x10$^{16}$ to 10$^{19}$ cm$^{-3}$. In S-MBE, pre-oxidized gallium in the
Externí odkaz:
http://arxiv.org/abs/2212.12096
Autor:
Motala, Michael J., Blanton, Eric, Hilton, Al, Heller, Eric, Muratore, Chris, Burzynski, Katherine, Brown, Jeff, Chabak, Kelson, Durstock, Michael, Snure, Michael, Glavin, Nicholas
Mechanical transfer of high performing thin film devices onto arbitrary substrates represents an exciting opportunity to improve device performance, explore non-traditional manufacturing approaches, and paves the way for soft, conformal, and flexible
Externí odkaz:
http://arxiv.org/abs/2002.02839
Akademický článek
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Akademický článek
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Autor:
Neal, Adam T., Mou, Shin, Rafique, Subrina, Zhao, Hongping, Ahmadi, Elaheh, Speck, James S., Stevens, Kevin T., Blevins, John D., Thomson, Darren B., Moser, Neil, Chabak, Kelson D., Jessen, Gregg H.
Publikováno v:
Appl. Phys. Lett. 113, 062101 (2018)
We have studied the properties of Si, Ge shallow donors and Fe, Mg deep acceptors in $\beta$-Ga2O3 through temperature dependent van der Pauw and Hall effect measurements of samples grown by a variety of methods, including edge-defined film-fed (EFG)
Externí odkaz:
http://arxiv.org/abs/1809.01230
Autor:
Zhang, Yuewei, Neal, Adam, Xia, Zhanbo, Joishi, Chandan, Zheng, Yuanhua, Bajaj, Sanyam, Brenner, Mark, Mou, Shin, Dorsey, Donald, Chabak, Kelson, Jessen, Gregg, Hwang, Jinwoo, Heremans, Joseph, Rajan, Siddharth
Beta-phase Ga2O3 has emerged as a promising candidate for a wide range of device applications, including power electronic devices, radio-frequency devices and solar-blind photodetectors. The wide bandgap energy and the predicted high breakdown field,
Externí odkaz:
http://arxiv.org/abs/1802.04426
Autor:
Luo, Xi, Halder, Subrata, Curtice, Walter R., Hwang, James C. M., Chabak, Kelson D., Walker, Jr., Dennis E., Dabiran, Amir M.
Small- and large-signal RF characteristics were measured on AlN GaN HEMTs with 80-160 nm gate length and 100-300 {\mu}m width. Consistent with the literature, current-gain cut-off frequency and maximum frequency of oscillation were found to increase
Externí odkaz:
http://arxiv.org/abs/1707.09065
Autor:
Neal, Adam T., Mou, Shin, Lopez, Roberto, Li, Jian V., Thomson, Darren B., Chabak, Kelson D., Jessen, Gregg H.
Publikováno v:
Scientific Reports 7, 13218 (2017)
Understanding the origin of unintentional doping in Ga2O3 is key to increasing breakdown voltages of Ga2O3 based power devices. Therefore, transport and capacitance spectroscopy studies have been performed to better understand the origin of unintenti
Externí odkaz:
http://arxiv.org/abs/1706.09960
Autor:
Chabak, Kelson D.
Thesis (M.S.)--Air Force Institute of Technology, 2008.
Title from title page of PDF document (viewed on: Dec 10, 2009).
Title from title page of PDF document (viewed on: Dec 10, 2009).
Externí odkaz:
http://handle.dtic.mil/100.2/ADA487086