Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Cha-Ming Shen"'
Publikováno v:
International Symposium for Testing and Failure Analysis.
Tiny circuit design reliability issue related to competitive signal was investigated in a sense amplifier (SA) circuitry of SRAM by E-Beam probing technique in this paper. The irregular output signals then traced back to former stage circuit and iden
Autor:
Tan-Chen Chuang, Chen-May Huang, Cha-Ming Shen, Shi-Chen Lin, Lian-Fon Wen, Jin-Hong Chou, Yen-Long Chang
Publikováno v:
International Symposium for Testing and Failure Analysis.
Highly-integrated radio frequency and mixed-mode devices that are manufactured in deep-submicron or more advanced CMOS processes are becoming more complex to analyze. The increased complexity presents us with many eccentric failure mechanisms that ar
Publikováno v:
International Symposium for Testing and Failure Analysis.
In this paper, we focus on how to identify non-visual failures by way of electrical analysis because some special failures cannot be observed by SEM (scanning electron microscopy) or TEM (transmission electron microscopy) even when they are precisely
Publikováno v:
International Symposium for Testing and Failure Analysis.
Scanning capacitance microscopy (SCM) is a 2-D carrier and/or dopant concentration profiling technique under development that utilizes the excellent spatial resolution of scanning probe microscopy. However, PV-SCM has limited capability to achieve th
Autor:
Y.-L. Chang, Tan-Chen Chuang, Liang-Feng Wen, Shi-Chen Lin, Chen-May Huang, Jin-Hong Chou, Cha-Ming Shen
Publikováno v:
2007 14th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
Fhis paper is to present a novel methodology to overcome above hardness, and two case study are brought out to demonstrate the application. In our methodology, no any new instrument was needed but only through these already accomplished EFA/PFA equip
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a novel deductive methodology, which is accomplished by applying difference analysis to nano-probing technique. In order to prove the novel methodology, the specimens with 90nm process and soft failures were chosen for the experim
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the evolution of advanced process technology, failure analysis has become more and more difficult because more defects are of the non-visual type (very tiny or even invisible defects) from new failure mechanisms. In this article, a novel and eff
Publikováno v:
13th International Symposium on the Physical and Failure Analysis of Integrated Circuits.
This paper described how to use conductive atomic force microscope (C-AFM) and scanning capacitance microscope (SCM) alternately to catch very tiny and cunning defect modes hidden in the indiscernible corner. These schemes are easily implemented with
Publikováno v:
International Symposium for Testing and Failure Analysis.
With the advancement in technology and lower operating voltage, new standards have evolved in circuit layout and design. Some of these new standards have increased the difficulties of the physical failure analysis process, especially on the front-end
Publikováno v:
International Symposium for Testing and Failure Analysis.
This paper presents a judicious reasoning method by coupling passive voltage contrast (PVC) with scanning probe microscopy (SPM) for revealing particular invisible defect modes, which were imperceptible to observe and very difficult to identify by me