Zobrazeno 1 - 10
of 30
pro vyhledávání: '"Ch. Zgheib"'
Autor:
V. S. Kharlamov, Dmitri V. Kulikov, Yu. V. Trushin, Henry Romanus, Ch. Zgheib, Maxim Lubov, Jörg Pezoldt
Publikováno v:
Journal of Applied Physics. 123:215302
An approach for the reconstruction of the composition profiles of heterostructures with chemically modified interfaces is presented. It is based on the comprehensive simulation of the heterostructure growth stages and the compositional changes occurr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::09a303af12e276379723d3bfd99242f6
https://doi.org/10.1063/1.5010287
https://doi.org/10.1063/1.5010287
Publikováno v:
Journal of Crystal Growth. 311:4665-4669
AlN thin films were grown at a temperature of 720 °C on (1 1 1) silicon carbide buffer layer deposited in turn on (1 1 1) silicon substrate by introducing Ge at the SiC/Si interface. The growth method used is the solid source molecular beam epitaxy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8551130f69d10ff272c34b940232ca0
https://doi.org/10.1016/j.jcrysgro.2009.08.034
https://doi.org/10.1016/j.jcrysgro.2009.08.034
Publikováno v:
Superlattices and Microstructures. 40:638-643
The effect of the germanium coverage prior to the epitaxial growth of 5 μm thick 3C-SiC on Si(100) substrates were evaluated with Atomic Force Microscopy and μ -Raman spectroscopy. The 3C-SiC layers were grown by atmospheric pressure chemical vapor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a054eb3c5f44ae768a1ee5f24a60e71a
https://doi.org/10.1016/j.spmi.2006.06.005
https://doi.org/10.1016/j.spmi.2006.06.005
Publikováno v:
Diamond and Related Materials. 15:1525-1534
The phonon dynamics of wurtzite aluminum nitride contaminated by oxygen were investigated by employing the Raman back scattering, the Fourier Transform Infrared (FT-IR) reflectivity and absorption, and the Brillouin scattering techniques on unseeded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b3c9e0f58ac4047da3be63003fecb96
https://doi.org/10.1016/j.diamond.2005.12.034
https://doi.org/10.1016/j.diamond.2005.12.034
Publikováno v:
Superlattices and Microstructures. 40:612-618
Heteroepitaxially grown 3C-SiC and 2H-AlN layers on Ge modified Si(111) substrates were investigated by Fourier transform infrared spectroscopic ellipsometry. The obtained phonon frequencies increase with increasing Ge pre-deposition indicating a dec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ff73ed644ea3bf96194030ef09b961c
https://doi.org/10.1016/j.spmi.2006.07.030
https://doi.org/10.1016/j.spmi.2006.07.030
Publikováno v:
Diamond and Related Materials. 15:1169-1174
Micro-Raman scattering and FT-IR reflectivity measurements were performed on bulk wurtzite AlN crystals grown by PVT method over a temperature range from 10 K to the room temperature after identifying the symmetry of each of the Raman-active zone-cen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3601369ceb5bc9655419ee88692032c6
https://doi.org/10.1016/j.diamond.2005.11.014
https://doi.org/10.1016/j.diamond.2005.11.014
Autor:
Gernot Ecke, Jörg Pezoldt, Ch. Förster, Ch. Zgheib, Pierre Masri, Th. Stauden, Ch. Y. Wang, Francisco M. Morales
Publikováno v:
Surface and Interface Analysis. 38:444-447
SIMS and transmission electron microscopy studies revealed an improvement of the SiC/Si(100) heterostructure properties if isovalent atoms with larger atomic dimensions than Si and C were used to modify the interface. The Ge incorporation at the inte
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89719cfaa0aa0f1237e43438be3cd4ac
https://doi.org/10.1002/sia.2240
https://doi.org/10.1002/sia.2240
Autor:
Oliver Ambacher, Joerg Pezoldt, M. Voelskow, Petia Weih, Th. Stauden, S. Shokhovets, Gernot Ecke, Ch. Zgheib, Wolfgang Skorupa
Publikováno v:
physica status solidi (a). 202:545-549
In the present study cubic 3C-(Si 1-x C 1-y )Ge x+y solid solutions were created by using ion beam synthesis. 3C-SiC thin layers grown on on-axis Si (111) substrates by Molecular Beam Epitaxy were implanted with Ge in order to incorporate Ge atoms in
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75cea6eec1983e60569ae4276cc4319f
https://doi.org/10.1002/pssa.200460418
https://doi.org/10.1002/pssa.200460418
Autor:
Oliver Ambacher, Joerg Pezoldt, Daniel Araujo, A. Sanz-Hervás, C. Fernández, Rafael García, Petia Weih, Th. Stauden, V. Cimalla, Sergio I. Molina, Pierre Masri, Ch. Zgheib, Francisco M. Morales
Publikováno v:
physica status solidi (c). 1:341-346
An alternative method for stress relaxation in the SiC/Si heteroepitaxial system based on the incorporation of a group-IV element (germanium) into the interface between SiC and Si is presented. We have investigated the effect of the temperature durin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::74603b63aa37d49a4d5f3b58f6f1ff3e
https://doi.org/10.1002/pssc.200303940
https://doi.org/10.1002/pssc.200303940
Autor:
Laurie E. McNeil, Francisco M. Morales, Ch. Zgheib, Pierre Masri, Th. Stauden, Ch. Förster, Oliver Ambacher, Jörg Pezoldt
An alternative route to improve the epitaxial growth of 3C-SiC (100) on Si(100) was developed. It consists in covering the silicon wafers with germanium prior to the carbonization step of the silicon substrate. Transmission electron microscopy and μ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c5720be8b64504d78ceca2ffe5ab20ad
