Zobrazeno 1 - 10
of 20
pro vyhledávání: '"Ch. Walczyk"'
Resistive switching of HfO2-based Metal–Insulator–Metal diodes: Impact of the top electrode material
Autor:
S. Kubotsch, H. Grampeix, Vincent Jousseaume, Ch. Walczyk, Christophe Vallée, Patrice Gonon, Malgorzata Sowinska, T. Bertaud, Damian Walczyk, Thomas Schroeder, C. Mannequin, Ch. Wenger
Publikováno v:
Thin Solid Films. 520:4551-4555
This paper deals with the impact of the top metal electrode on the resistive switching properties of HfO 2 -based Metal-Insulator-Metal diodes. By screening five different metals as top electrode, Al–Cu–Hf–Pt–Ti, we have demonstrated the feas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9863fa8da06d0f713ae2ce79a422705f
https://doi.org/10.1016/j.tsf.2011.10.183
https://doi.org/10.1016/j.tsf.2011.10.183
Publikováno v:
Thin Solid Films. 518:4380-4384
Thin HfO2 films were grown as high-k dielectrics for Metal–Insulator–Metal applications by Atomic Vapor Deposition on 8 inch TiN/Si substrates using pure tetrakis(ethylmethylamido)hafnium precursor. Influence of deposition temperature (320–400
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b63dfd568e633e8b80b08b315e06564b
https://doi.org/10.1016/j.tsf.2010.01.060
https://doi.org/10.1016/j.tsf.2010.01.060
Autor:
Mindaugas Lukosius, Malgorzata Sowinska, T. Bertaud, Ch. Walczyk, Bernd Tillack, Ch. Wenger, Mirko Fraschke, Damian Walczyk, Thomas Schroeder
Publikováno v:
Microelectronic Engineering. 88:1133-1135
This work addresses a 1T1R RRAM architecture, which allows for the precise and reliable control of the forming/set current by using an access transistor. The 1T1R devices were fabricated in a modified [email protected] CMOS technology. The memory cel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e20ee313b820b7cec2d1fe5896a89886
https://doi.org/10.1016/j.mee.2011.03.123
https://doi.org/10.1016/j.mee.2011.03.123
Autor:
A. Fox, Ch. Wenger, A. Scheit, Thomas Schroeder, M. Lukosius, Bernd Tillack, Dirk Wolansky, R. Korolevych, Gunter Schoof, T. Bertaud, C. Wolf, Valeriy Stikanov, Rolf Kraemer, Malgorzata Sowinska, Ch. Walczyk, Mirko Fraschke, Damian Walczyk, M. A. Schubert
Publikováno v:
2012 International Semiconductor Conference Dresden-Grenoble (ISCDG).
This work reports the bipolar resistive switching behavior of more than 100 back-end-of-line (BEOL) integrated 600×600nm2 TiN/HfO 2 /Ti/TiN MIM devices in a 4 kbit memory array. Reliable current-voltage switching characteristics were only observed f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fef5c321734edbf32efe3eb65b8b91b
https://doi.org/10.1109/iscdg.2012.6360035
https://doi.org/10.1109/iscdg.2012.6360035
Autor:
Bernd Tillack, Mirko Fraschke, M. Lukosius, Dirk Wolansky, A. Fox, Thomas Schroeder, Ch. Walczyk, Ch. Wenger
Publikováno v:
2009 10th Annual Non-Volatile Memory Technology Symposium (NVMTS).
Bipolar resistive switching in TiN/HfO2/Ti/TiN devices using a CMOS technology process is demonstrated. The performance metrics include a retention time >105 s and a cycling endurance in dc sweep mode >102. By controlling either the set current Iset
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6a8665a946cf15bc9ac7e596a4f80cd1
https://doi.org/10.1109/nvmt.2009.5445490
https://doi.org/10.1109/nvmt.2009.5445490
Autor:
Malgorzata Sowinska, Damian Walczyk, S. Kubotsch, Ch. Walczyk, Thomas Schroeder, Ch. Wenger, T. Bertaud
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 41:012018
The electrical characteristics of different resistance states (virgin, OFF and ON) of a Ti/HfO2/TiN metal-insulator-metal device for resistance random access memory are investigated under different gas ambient. The influence of the atmosphere, the to
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc76ec160b446c07d03cab464893df6f
https://doi.org/10.1088/1757-899x/41/1/012018
https://doi.org/10.1088/1757-899x/41/1/012018
Autor:
Malgorzata Sowinska, Mindaugas Lukosius, Ch. Walczyk, W. Drube, M. A. Schubert, Damian Walczyk, T. Bertaud, Sebastian Thiess, Thomas Schroeder
Publikováno v:
Applied physics letters 100, 233509 (2012). doi:10.1063/1.4728118
The chemical and electronic modifications induced by the electroforming process on the Ti/HfO2/TiN-based resistive switching devices were investigated by non-destructive hard x-ray photoelectron spectroscopy (HAXPES). The results indicate an increase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7c0f434d36783367e56ff351122b86f1
https://doi.org/10.1063/1.4728118
https://doi.org/10.1063/1.4728118
Autor:
M. Lukosius, Thomas Schroeder, Sebastian Thiess, J. Dabrowski, Ch. Wenger, Ioan Costina, Dirk Wolansky, A. Fox, Mirko Fraschke, Bernd Tillack, Enrique Miranda, Damian Walczyk, Ch. Walczyk
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 29:01AD02
The authors demonstrate bipolar resistive switching in TiN/HfO2/Ti(top)/TiN devices using a (Bi) complementary metal-oxide semiconductor (CMOS) compatible technology process. The device performance includes a cycling endurance in dc sweeping mode >10
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::42cdd49547a1af69e95a246e1d80823b
https://doi.org/10.1116/1.3536524
https://doi.org/10.1116/1.3536524
Autor:
M. Badylevich, S. Van Elshocht, Ch. Walczyk, Valery V. Afanas'ev, M. Lukosius, Wan-Chih Wang, Andre Stesmans, Ch. Wenger, Jorge A. Kittl, C. Adelmann
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 8:012028
We have investigated yttrium oxide (Y2O3) as a charge trapping layer for nonvolatile memory cells. The Y2O3 films of 7 to 55 nm thick were deposited by atomic vapour deposition on (100)Si with a 2 or 5−nm thick pregrown thermal SiO2 serving as a tu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75367697acc075118fda472e7e481988
https://doi.org/10.1088/1757-899x/8/1/012028
https://doi.org/10.1088/1757-899x/8/1/012028
Autor:
G. Weidner, J. Dabrowski, Peter Zaumseil, Ch. Walczyk, H.-J. Müssig, Thomas Schroeder, G. Lupina, Olaf Seifarth
Publikováno v:
Journal of Applied Physics. 106:104105
Single crystalline PrO2(111)/Si(111) heterostructures are flexible buffers for global Ge integration on Si. A combined materials science–electrical characterization is carried out to study the influence of postdeposition annealing in 1 bar oxygen a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e9bfaa63352b85f91f3624816db80e20
https://doi.org/10.1063/1.3259411
https://doi.org/10.1063/1.3259411