Zobrazeno 1 - 10
of 223
pro vyhledávání: '"Ch. Muller"'
Autor:
L. Perniola, Jacques Cluzel, Julien Buckley, S. Tirano, Ch. Muller, B. De Salvo, Damien Deleruyelle, Vincent Jousseaume, G. Reimbold
Publikováno v:
Microelectronic Engineering. 88:1129-1132
In this paper, a peculiar attention is turned towards the understanding of the current overshoot occurring during the forming operation in resistive switching memory devices. This phenomenon is attributed to the discharge of a parasitic capacitance i
Autor:
Elena Cianci, Ch. Muller, A. Demolliens, C. Dumas, Marco Fanciulli, Sabina Spiga, I. Tortorelli, Damien Deleruyelle, R. Bez
Publikováno v:
Thin Solid Films. 519:3798-3803
This paper demonstrates the feasibility of resistive switching memory elements integrating a nickel oxide film deposited on top of a pillar bottom electrode. The unipolar switching was investigated over a wide temperature range (25 to 125 °C) on sam
Autor:
Igor A. Luk'yanchuk, Jean-Raymond Gavarri, Abdelkader Outzourhit, M. Khachane, Pawel Nowakowski, Ch. Muller, M. Elaatmani, Sylvie Villain, A. Zegzouti
Publikováno v:
Ferroelectrics. 371:34-42
Films of a catalytic compound (RuO 2 ) were deposited by spin-coating process on ferroelectric films mainly constituted of SrBi 2 Ta 2 O 9 (SBT) and Ba 2 NaNb 5 O 15 (BNN) phases. SBT films were deposited by MOCVD method, and BNN films were deposited
Autor:
A. Outzourhite, A. Zegzouti, M. Elaatmani, Pawel Nowakowski, M. Daoud, Jean-Raymond Gavarri, Ch. Muller, Sylvie Villain, Igor A. Luk'yanchuk, M. Khachane
Publikováno v:
Applied Surface Science. 254:1399-1404
Catalytic ruthenium dioxide films were deposited by spin-coating process on ferroelectric films mainly constituted of SrBi2Ta2O9 (SBT) and Ba2NaNb5O15 (BNN) phases. After thermal treatment under air, these ferroelectric–catalytic systems were chara
Autor:
Ivan Baturin, V. Ya. Shur, D. K. Kuznetsov, Ch. Muller, Andris Sternberg, T. Schneller, N. Menou
Publikováno v:
Ferroelectrics. 340:161-167
Spatially non-uniform imprint behavior induced by X-ray synchrotron, electron, and neutron irradiation has been investigated in Pb(Zr,Ti)O3 thin films. The obtained effects have been explained as a result of acceleration of the bulk screening process
Publikováno v:
Journal of Applied Crystallography. 39:376-384
Future development of ferroelectric random access memory requires the integration of three-dimensional ferroelectric capacitors (FeCAP) in a microelectronic architecture. In this paper, pin-shaped two-dimensional and three-dimensional Sr0.8Bi2.2Ta2O9
Autor:
G. Anastasi, Judit Lisoni, N. Menou, I. L. Fragala, Maria Favazza, Ch. Muller, A. Baeri, Dirk J. Wouters, Guglielmo G. Condorelli, C. Bedoya, R. Lo Nigro
Publikováno v:
Chemistry of Materials. 18:1016-1022
MOCVD fabrication of ferroelectric SrBi 2 Ta 2 O 9 (SBT) films using Sr(hfac) 2 ·tetraglyme, Bi(C 6 H 5 ) 3 , and Ta(OC 2 H 5 ) 5 precursors is reported. The SBT phase has been reproducibly obtained adopting a two-step procedure, namely, the deposit
Autor:
Jean-Louis Hodeau, T. Schneller, N. Menou, D. K. Kuznetsov, Ch. Muller, Ivan Baturin, V. Ya. Shur
Publikováno v:
Journal of Physics: Condensed Matter. 17:7681-7688
Highly brilliant synchrotron x-ray radiation was used to measure in situ the microstructural response of a ferroelectric capacitor subjected to bipolar rectangular pulses. High-resolution x-ray diffraction experiments were performed on a (111)-orient
Autor:
D. K. Kuznetsov, Ch. Muller, Ivan Baturin, Vladimir Ya. Shur, Andris Sternberg, Jean-Louis Hodeau, N. Menou
Publikováno v:
Materials Science and Engineering: B. 120:141-145
Spatially nonuniform imprint behavior induced by X-ray synchrotron, electron and neutron irradiation has been investigated in sol–gel Pb(Zr,Ti)O3 thin films. The analysis of the switching current data reveals the strong influence of irradiation on
Publikováno v:
physica status solidi (b). 241:2629-2638
The structures of PbK2LiNb5O15 showing the ferroelectricity below about 640 K have been studied in the paraelectric and ferroelectric phases by means of synchrotron X-ray powder diffraction. The data are analyzed with a Rietveld refinement method. It