Zobrazeno 1 - 10
of 301
pro vyhledávání: '"Ch. Lienau"'
Autor:
Mun Seok Jeong, Jong Su Kim, Ok-Hwan Cha, Soo Bong Choi, Yong Hwan Kim, Clare C. Byeon, Sang-Youp Yim, Ch. Lienau, Dong-Yeon Park, Dong-Yoon Kim
Publikováno v:
Journal of the Korean Physical Society. 56:717-720
Carl von Ossietzky Universit¨at Oldenburg, Institut fur¨ Physik, 26111 Oldenburg, Germany(Received 20 January 2010)A low-temperature near-field scanning optical microscope (LT-NSOM) is designed and realized inorder to study the optical properties
Publikováno v:
physica status solidi (b). 234:453-462
For many years, Roland Zimmermann and his research group have devoted much of their attention to the effects of disorder and exciton localization on the optical properties of semiconductor nanostructures. With the recent development of spectroscopic
Autor:
Sungchul Hohng, Dongmok Kim, Ch. Lienau, Q-Han Park, Jong Wan Park, Young-Zoon Yoon, V. Malyarchuk, Jin-Gyu Kim
Publikováno v:
Journal of the Optical Society of Korea. 6:83-86
Nanoscopic emission from periodic nano-hole arrays in thick metal films is studied experimentally. The experiments give direct evidence for SP excitations in such structures. We show that the symmetry of the emission is governed by polarization and i
Publikováno v:
Journal of Applied Physics. 92:2729-2733
We investigate optoelectronic properties of monolithically stacked diode lasers, so-called Nanostack® devices that include two nominally identical waveguide segments separated by a specially designed tunnel junction. Near-field optical microscopy pr
Autor:
A. Bärwolff, Jens W. Tomm, T. Günther, Markus Weyers, V. Malyarchuk, Eberhard Richter, Ch. Lienau, S. Gramlich, Andre Maaßdorf, Frank Brunner, D. Nickel, G. Trankle, Thomas Elsaesser, Yu. I. Mazur
Publikováno v:
Journal of Applied Physics. 91:5072-5078
Room-temperature photoluminescence decay time measurements in heavily doped GaAs:C-layers designed as base layers for heterojunction bipolar transistors are reported. These measurements provide access to nonequilibrium minority carrier lifetimes that
Autor:
Günther Tränkle, Ch. Lienau, Markus Weyers, Andre Maaßdorf, Frank Brunner, Yu. I. Mazur, M. Jurisch, Jens W. Tomm, T. Günther, V. Malyarchuk, Eberhard Richter, S. Gramlich
Publikováno v:
Materials Science and Engineering: B. :25-28
We report photoluminescence decay time measurements in heavily Carbon-doped GaAs epilayers which are designed for the application in heterojunction bipolar transistors. These data provide access to carrier lifetimes that determine the current gains,
Autor:
Vincenzo Savona, R. Zimmermann, Francesca Intonti, Thomas Elsaesser, Valentina Emiliani, Ch. Lienau, Erich Runge
Publikováno v:
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The spectral autocorrelation for a set of over 400 near-field photoluminescence spectra of a narrow quantum well has been evaluated. It is compared with a microscopic model of an exciton in a disorder potential. The analysis provides strong evidence
Publikováno v:
Journal of Crystal Growth. 210:296-302
Near-field optical beam-induced current (NOBIC) experiments performed on commercial laser diode devices are presented. NOBIC and `macroscopic’ photocurrent data are compared and new results on edge-emitting laser devices with different waveguide ar
Publikováno v:
Physica B: Condensed Matter. 272:96-100
Quasi-two-color femtosecond pump–probe spectroscopy and near-field scanning optical microscopy are combined to study the carrier dynamics in single semiconductor nanostructures. In temporally, spectrally and spatially resolved measurements with a t
Autor:
K. H. Ploog, A. Richter, Manfred Ramsteiner, G. Behme, Thomas Elsaesser, Ch. Lienau, R Richard Nötzel, M. Süptitz
Publikováno v:
physica status solidi (b). 206:153-166
The optical properties of a new quantum-well-embedded GaAs quantum wire structure grown on patterned (311)A GaAs surfaces are directly mapped by low temperature near-field scanning optical microscopy (NSOM). Photoluminescence excitation spectroscopy