Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Ch. Kölper"'
Autor:
N. Linder, Achim Trampert, Jonas Lähnemann, Martin Strassburg, Werner Bergbauer, Hergo-Heinrich Wehmann, Andreas Waag, Sönke Fündling, Ch. Kölper, Shunfeng Li, Claudia Roder
Publikováno v:
Journal of Crystal Growth
We demonstrate the morphological properties of height, diameter and shape controlled N-face GaN nanorods (NRs) by adjusting conventional growth parameters of a standard metalorganic vapour phase epitaxy (MOVPE) growth process. Particularly the hydrog
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::282a7d2f1677ca0265ae097f3359756f
https://doi.org/10.1016/j.jcrysgro.2010.07.067
https://doi.org/10.1016/j.jcrysgro.2010.07.067
Autor:
Claudia Roder, Jonas Lähnemann, Martin Strassburg, Werner Bergbauer, Achim Trampert, Sönke Fündling, Hergo-Heinrich Wehmann, Ch. Kölper, N. Linder, Andreas Waag, Shunfeng Li
Publikováno v:
Nanotechnology. 21:305201
We demonstrate the fabrication of N-face GaN nanorods by metal organic vapour phase epitaxy (MOVPE), using continuous-flux conditions. This is in contrast to other approaches reported so far, which have been based on growth modes far off the conventi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::fb2e0cd6ff4850f90fe7a81973899400
https://doi.org/10.1088/0957-4484/21/30/305201
https://doi.org/10.1088/0957-4484/21/30/305201
Autor:
Bergbauer W; Osram Opto Semiconductors GmbH, Regensburg, Germany. werner.bergbauer@osram-os.com, Strassburg M, Kölper Ch, Linder N, Roder C, Lähnemann J, Trampert A, Fündling S, Li SF, Wehmann HH, Waag A
Publikováno v:
Nanotechnology [Nanotechnology] 2010 Jul 30; Vol. 21 (30), pp. 305201. Date of Electronic Publication: 2010 Jul 06.