Zobrazeno 1 - 10
of 79
pro vyhledávání: '"Ch. Frank-Rotsch"'
Publikováno v:
physica status solidi (b). 252:1827-1831
Fourier transform infrared absorption measurements have been carried out on GaAs crystals doped or implanted with carbon, nitrogen and oxygen. In the presence of carbon and nitrogen, thermally stable defects occur with strong molecular-like bonding g
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b8fb51e2cf319dabceef6697b1e88b
https://doi.org/10.1002/pssb.201552028
https://doi.org/10.1002/pssb.201552028
Autor:
Ch. Frank-Rotsch, Natasha Dropka
Publikováno v:
Magnetohydrodynamics. 51:149-156
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ceb4ce8483dbd961d2f462043de7eed4
https://doi.org/10.22364/mhd.51.1.14
https://doi.org/10.22364/mhd.51.1.14
Autor:
Peter Rudolph, M. Müller, F.M. Kiessling, Frank Dr. Büllesfeld, Ch. Frank-Rotsch, Natasha Dropka
Publikováno v:
Journal of Crystal Growth. 360:81-86
A1. Directional solidification A1. Magnetic fields A1. Impurities A2. Vertical gradient freeze B2. Multi-crystalline silicon abstract Solar-grade boron doped silicon has been directionally solidified in a vertical gradient freeze-type furnace equippe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07d54f1f5b6b200c2ed18c262832bde9
https://doi.org/10.1016/j.jcrysgro.2012.03.017
https://doi.org/10.1016/j.jcrysgro.2012.03.017
Publikováno v:
Journal of Crystal Growth. 352:16-20
A1. Doping A1. Magnetic fields A2. Gradient freeze technique B2. Semiconducting germanium abstract To achieve high-quality VGF-grown semiconductor single crystals of germanium a favorable nearly flat slightly convex solid/liquid interface shape is re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e01fa059da033f922931f83d5ae29a52
https://doi.org/10.1016/j.jcrysgro.2012.02.015
https://doi.org/10.1016/j.jcrysgro.2012.02.015
Publikováno v:
Journal of Crystal Growth. 338:208-213
Traveling magnetic fields (TMFs) can be used to control the shape of the crystal–melt interfaces at crystal growth from melt. Here, we present the numerical results of a systematic study on the influence of a TMF generated by a KRIST MAG ˜ ® heat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::875f2a7a99cfc488acfb6ba7b66e2e1b
https://doi.org/10.1016/j.jcrysgro.2011.10.007
https://doi.org/10.1016/j.jcrysgro.2011.10.007
Publikováno v:
Crystal Research and Technology. 47:285-292
We present 3D simulations of melt flow in a Czochralski process of Si single crystal growth with a travelling magnetic field (TMF). The choice of the TMF significantly influences the thermal field in the melt. Using a downwards TMF field the induced
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1d98239b5b9ec443c695418269c4d26a
https://doi.org/10.1002/crat.201100494
https://doi.org/10.1002/crat.201100494
Publikováno v:
Crystal Research and Technology. 47:299-306
In a typical Cz set-up, the silicon melt sustained in a fused silica crucible is exposed to oxygen dissolving from the hot crucible walls. The reduction of oxygen incorporation into the growing silicon crystal poses one of the crucial challenges. Qua
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::100c5e74a324dadf83997ef3ac3212ba
https://doi.org/10.1002/crat.201100483
https://doi.org/10.1002/crat.201100483
Publikováno v:
Crystal Research and Technology. 47:279-284
The challenge in the future fabrication of semiconductor bulk crystals is the improvement of the crystal quality with a simultaneous increase of the yield. For that, a proper control of mass transfer within the fluid phase is required. Besides the da
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c42a2311ef4e96a090351525c4c248e
https://doi.org/10.1002/crat.201100413
https://doi.org/10.1002/crat.201100413
Autor:
M. Czupalla, Peter Rudolph, F. Kirscht, Wolfram Miller, B. Lux, Martin Albrecht, Ch. Frank-Rotsch
Publikováno v:
Journal of Crystal Growth. 318:249-254
Conventionally grown Czochralski (Cz) silicon crystals for photovoltaic (PV) application have an unfavourable cylindrical shape leading to essential material loss during the wafer cutting process. Additionally, the typical high oxygen concentration p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e14999cdc8a9943bc64d9307b5a1f74e
https://doi.org/10.1016/j.jcrysgro.2010.10.070
https://doi.org/10.1016/j.jcrysgro.2010.10.070
Publikováno v:
Journal of Crystal Growth. 318:244-248
We have performed 3D calculations of the melt flow during Czochralski growth of nearly square-shaped silicon crystals by means of Ansys-cfx. Beforehand, the temperature field in the furnace has been computed by axisymmetric computations using CrysMAS
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2bb79911b44fb14fb2ff494879b4b70e
https://doi.org/10.1016/j.jcrysgro.2010.10.098
https://doi.org/10.1016/j.jcrysgro.2010.10.098