Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Ch. Fröjdh"'
Autor:
J. Marchal, D. Doak, Kevin M. Smith, Val O'Shea, Ch. Fröjdh, R.M. Gwilliam, M. Abdalla, J. Scott, A. Al-Ajili, M. Rahman
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 206:462-466
The constantly growing research activities based on ion beams require an increasing precision in the control of the different ion beam parameters, such as beam uniformity and intensity. This paper presents a method of measuring the ion beam profile a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4133903719c495b7f2bc6dd609847d6a
https://doi.org/10.1016/s0168-583x(03)00794-8
https://doi.org/10.1016/s0168-583x(03)00794-8
Autor:
J. Marchal, J. A. van den Berg, Ch. Fröjdh, M. Rahman, M. Abdalla, A Nejim, M.S. Passmore, Kevin M. Smith, Val O'Shea
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 487:224-231
The use of ion implanters has been vital to the downward scaling of device dimensions in silicon technology. To achieve good process control, the ion beam characteristics within the implanter must be well known. Hybrid pixel technology is advanced as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e75f3f5fad1a33ffb172a011f08dde45
https://doi.org/10.1016/s0168-9002(02)00969-5
https://doi.org/10.1016/s0168-9002(02)00969-5
Autor:
Val O'Shea, M. Östlund, Z. Fakoor-Biniaz, J. Andersson, D. Meikle, J. Alverbro, Kevin M. Smith, H. Martijn, R. Irsigler, Ch. Fröjdh, P. Helander
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 460:67-71
We report on gain and offset corrections for GaAs X-ray pixel detectors, which were hybridised to silicon CMOS readout integrated circuits (ROICs). The whole detector array contains 320×240 square-shaped pixels with a pitch of 38 μm. The GaAs pixel
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3d01ecf69e1de87f742a4e5475d8b18
https://doi.org/10.1016/s0168-9002(00)01097-4
https://doi.org/10.1016/s0168-9002(00)01097-4
Autor:
Kevin M. Smith, P. Helander, R. Irsigler, Ch. Fröjdh, J. Alverbro, S. Manolopoulos, Val O'Shea, J. Borglind, J. Andersson
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 434:24-29
320×240 pixels GaAs Schottky barrier detector arrays were fabricated, hybridized to silicon readout circuits, and subsequently evaluated. The detector chip was based on semi-insulating LEC GaAs material. The square shaped pixel detector elements wer
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b75f36c472721fc664e210599bcb00d
https://doi.org/10.1016/s0168-9002(99)00425-8
https://doi.org/10.1016/s0168-9002(99)00425-8
Autor:
J. Uher, Ch. Fröjdh, T. Holý, J. Jak̥bek, S. Petersson, S. Pospíšif, G. Thungström, D. Vavík, Z. Vykydal, Carlos Granja, Claude Leroy, Ivan Stekl
Publikováno v:
AIP Conference Proceedings.
Semiconductor silicon detectors are used in many applications for detection and imaging of ionizing radiation. Detection of neutrons is also possible with these devices. However, the silicon detectors must be adapted for the thermal neutron detection
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7ad609b4c64dd8d3ff26d82469de382f
https://doi.org/10.1063/1.2825756
https://doi.org/10.1063/1.2825756
Conference
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Akademický článek
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