Zobrazeno 1 - 10
of 21
pro vyhledávání: '"Ch. Ehrlich"'
Publikováno v:
Microelectronic Engineering. 46:197-200
A new software tool for the support of cell projection in combination with variable shape electron beam lithography for mask making and direct write application is described. The program has been designed and developed for the WePrint 200, a new vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8bfd62232558ce7f379ea8bdc54403a0
https://doi.org/10.1016/s0167-9317(99)00061-1
https://doi.org/10.1016/s0167-9317(99)00061-1
Publikováno v:
Microelectronic Engineering. 27:151-154
Many efforts are made to develop lithographic equipment for production in the .2 @mm region and below. Problems arise in photon beam lithography (optical and X-Ray), when high demands of resolution and overlay have to be met. In terms of resolution a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4417fa98f9b6d3b26acee475a526d947
https://doi.org/10.1016/0167-9317(94)00077-8
https://doi.org/10.1016/0167-9317(94)00077-8
Publikováno v:
Microelectronic Engineering. 21:159-163
Following the way to future x-ray nanolithography, the fabrication process of adequate resist patterns by means of e-beam lithography has been studied. Principal restrictions like high necessity of time for sequential exposure and statistical variati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b6a604155d89839bd441c368fa552b02
https://doi.org/10.1016/0167-9317(93)90047-9
https://doi.org/10.1016/0167-9317(93)90047-9
The pattern placement accuracy (PPA) is an important parameter in e-beam "direct write" for nanoelectronic applications. With a LEICA EBPG 4 HR, the influence of different mark/substrate combinations and of several writing parameters on the PPA was i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ce8b08fe6e1c1028816d8b9466ff53ff
https://publica.fraunhofer.de/handle/publica/184374
https://publica.fraunhofer.de/handle/publica/184374
Publikováno v:
Journal of Crystal Growth. 72:371-375
The emission of Cd1−xMnxS is investigated at low concentrations (x 0.01) of Mn by time resolved spectroscopy. At low concentration x the zero phonon lines due to the 3d transition 4T1 → 6A1 of Mn2+ are analysed. The emission has an exponential de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f57c1a981bdd26868d5dd7ac4c355809
https://doi.org/10.1016/0022-0248(85)90175-7
https://doi.org/10.1016/0022-0248(85)90175-7
Publikováno v:
Microelectronic Engineering. 9:117-120
A further increase in the integration density of SRAM and DRAM memories will be limited by resolution as well as overlay accuracy. In the case of synchrotron-based X-ray lithography, the main contribution to the total overlay budget is given by the a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9899afa324d9c215ee54f14eb5b2a25e
https://doi.org/10.1016/0167-9317(89)90027-0
https://doi.org/10.1016/0167-9317(89)90027-0
The electron energy of, e.g., 50 keV has advantages over less electron energy for X-ray mask substrates because the influence of the proximity effect is reduced. However, also in the case of writing with high energy electrons on thin membranes, the p
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e7cedd01eea66cf49aed9cc4d99f3ff9
https://publica.fraunhofer.de/handle/publica/175873
https://publica.fraunhofer.de/handle/publica/175873
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