Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Ch. Dubois"'
Publikováno v:
Science & Sports. 28:181-187
Summary Objectives To quantify with a force platform the support of the operated leg through table tennis practice and to study the effect of this physical activity on the early support of the knee recovery after knee anterior cruciate ligament (ACL)
Publikováno v:
Proceedings of the Royal Society A: Mathematical, Physical and Engineering Sciences. 467:3241-3256
A thermodynamic description of transient heat conduction at small length and timescales is proposed. It is based on extended irreversible thermodynamics and the main feature of this formalism is to elevate the heat flux vector to the status of indepe
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 183:318-322
In this paper, we shed light on the strong interaction between the cavity layer induced by helium implantation and boron. First of all, we evidence the impact of He gettering step on a boron-diffused profile. In order to study the boron–cavity inte
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 178:188-191
It has been shown that high-dose aluminium implantation leads to the formation of extended defects. The strong interaction between these defects and the dopant significantly affects the final profile. However, the detailed mechanisms governing the tr
Publikováno v:
Scopus-Elsevier
Al was implanted at 180 keV to a dose of 4.5 × 10 14 cm −2 . Various anneals were performed in the temperature range (900–1100°C), for times varying from 15 min up to several hours. The SIMS measurements reveal anomalous redistribution of the a
Publikováno v:
Materials Science in Semiconductor Processing. 1:299-302
In situ phosphorus-doped (P-doped) polysilicon (poly-Si) thin films are obtained by rapid thermal low pressure chemical vapor deposition (RTLPCVD) in a single chamber RTP machine by using diluted silane (SiH4/Ar=10%) and phosphine (PH3=200 ppm). Depo
Publikováno v:
Thin Solid Films. 296:32-36
Silicon nitride (Si-N) and oxynitride (Si-O-N) thin films are obtained by low pressure rapid thermal chemical vapor deposition (RT-LPCVD) by using the reaction of diluted silane (SiH 4 /Ar = 10%) with ammonia (NH 3 ) or a mixture of ammonia and nitro
Publikováno v:
Journal of Applied Physics. 87:2661-2663
Redistribution of a high-energy (3 MeV) low-dose (5×1013 cm−2) implanted aluminum profile in silicon under inert and dry O2 is investigated in the temperature range (900–1100 °C). The chemical profiles were measured by secondary ion mass spectr
Publikováno v:
Mater. Sci. Eng. B
Mater. Sci. Eng. B, 2008, 154-155, pp. 68-71
Diffusion of phosphorus implanted in germanium
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices, May 2008, Strasbourg, France. pp. 68-71
Mater. Sci. Eng. B, 2008, 154-155, pp. 68-71
Diffusion of phosphorus implanted in germanium
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices
European Material Research Society (E-MRS) Spring Conference, Symposium on Front-end Junction and Contact Formation in Future Silicon/Germanium Based Devices, May 2008, Strasbourg, France. pp. 68-71
Diffusion experiments of phosphorus introduced by ion implantation in high purity germanium, bare or covered by silicon nitride have been performed at temperatures between 500 °C and 720 °C for times up to 4 h. The distribution profiles of phosphor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3518a5c228a5f732fe02ac2182738e3a
https://hal.archives-ouvertes.fr/hal-00301345
https://hal.archives-ouvertes.fr/hal-00301345
Autor:
Ch, Dubois-Gosnet
Publikováno v:
Allergie et immunologie. 34(1)
Buccal mucosal allergies are rare because the conditions for sensitization are less favourable in the buccal environment. Clinical presentation is dominated by subjective manifestations (hardening, hypersialorrhea, "burning mouth" syndrome). Extraden