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Autor:
Ch. Dua, M.-A. diForte-Poisson, Erwan Morvan, Daniel Donoval, Jaroslav Kováč, Peter Kordos, Ales Chvala, R. Šramatý
Publikováno v:
Journal of Applied Physics. 109:063711
The current-voltage characteristics of the Ni/InAlN/GaN Schottky diodes were measured at various temperatures in the range of 300–820 K. The experimental data were analyzed considering different current-transport mechanisms, such as thermionic emis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ea7ebde8983ab154c6ddaf0386d4a740
https://doi.org/10.1063/1.3560919
https://doi.org/10.1063/1.3560919
