Zobrazeno 1 - 10
of 62
pro vyhledávání: '"Ch. Deneke"'
Autor:
Ailton J. Garcia Junior, Rogerio Magalhães-Paniago, Barbara L. T. Rosa, Paulo Sérgio Soares Guimarães, Ch. Deneke, Angelo Malachias, Carlos A. Parra-Murillo, Thais Chagas
Publikováno v:
ACS Applied Nano Materials. 2:4655-4664
Nanoscale heterostructure engineering is the main target for the development of optoelectronic devices. In this sense, a precise knowledge of local electronic response after materials processing is...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d7bf1d4f3a65c964616d6581e2576b9a
https://doi.org/10.1021/acsanm.9b01124
https://doi.org/10.1021/acsanm.9b01124
Autor:
Angelo Malachias, Luciano G. Moura, Ch. Deneke, L. A. B. Marçal, Rodrigo G. Lacerda, Ingrid D. Barcelos
Publikováno v:
RSC Advances. 6:103707-103713
The rolling of semiconductor thin films with graphene layers on top is carried out to integrate distinct material classes. Tubular structures obtained can span from the nanometer to the micrometer range, providing controlled and homogeneous curvature
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a12a92da0bdbcfa815241092cecfa2ac
https://doi.org/10.1039/c6ra22588h
https://doi.org/10.1039/c6ra22588h
Publikováno v:
LOCUS Repositório Institucional da UFV
Universidade Federal de Viçosa (UFV)
instacron:UFV
Universidade Federal de Viçosa (UFV)
instacron:UFV
Partly released InGaAs layers forming a wrinkled network are used as templates for InAs growth. A systematic growth study was carried out, where InAs amounts from 0 ML to 3 ML were deposited on the patterned samples. The material migration during gro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ca3432a7245e577056b8f28c4fb8fd11
https://doi.org/10.1016/j.jcrysgro.2015.02.008
https://doi.org/10.1016/j.jcrysgro.2015.02.008
Publikováno v:
Microelectronic Engineering. 84:1427-1430
We present a fabrication technique to realize SiO"x/Si optical ring resonators based on rolled-up Si microtubes. The strain gradient inside a partially strain-relaxed Si film on a relaxed Ge buffer is employed to roll up the released Si or SiO"x/Si l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61879926ccca98481400981abd739842
https://doi.org/10.1016/j.mee.2007.01.089
https://doi.org/10.1016/j.mee.2007.01.089
Autor:
Ch. Deneke, W. Winter, Armando Rastelli, Suwit Kiravittaya, Stefan Mendach, Tsvetelina Merdzhanova, Emica Coric, Oliver G. Schmidt, Ata Ulhaq, Francesca Cavallo, F. Horton, Mohamed Benyoucef, Lijuan Wang
Publikováno v:
physica status solidi c. 3:3641-3645
We report on the fabrication and characterization of GaAs-based microdisk resonators containing lowsurface-density self-assembled In(Ga)As quantum dots. Microdisks of different sizes are obtained by optical and electron-beam lithography followed by a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::715f9ac5f0d87f9d11d7e2372ec47fbf
https://doi.org/10.1002/pssc.200671502
https://doi.org/10.1002/pssc.200671502
Autor:
Ch. Deneke, Oliver G. Schmidt
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 23:269-273
We study the formation process of rolled-up InAs/GaAs nanotubes (RUNTs) as a function of etching time and sacrificial layer thickness for tube diameters between 20 and 560 nm . Within this diameter range the roll-up velocity strongly depends on the s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::854bac99a2f187150b13aafa43ca7780
https://doi.org/10.1016/j.physe.2004.02.012
https://doi.org/10.1016/j.physe.2004.02.012
Publikováno v:
Semiconductor Science and Technology. 17:1278-1281
Free-standing nanotubes are formed by rolling-up InGaAs/GaAs bilayers on a GaAs substrate. We present a systematic study of the tube diameter as a function of bilayer thicknesses. In our study we take into account that 2–4 monolayers of the top GaA
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c3f410dd680f6a870a36aa1ac996e98b
https://doi.org/10.1088/0268-1242/17/12/312
https://doi.org/10.1088/0268-1242/17/12/312
Autor:
Oliver G. Schmidt, C. Müller, Suwit Kiravittaya, R. Songmuang, H. Heidemeyer, R. Zapf-Gottwick, Ch. Deneke, Neng Yun Jin-Phillipp, Y. Nakamura
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 8:1025-1034
We present a detailed investigation of novel strain-driven semiconductor nanostructures. Our examinations include self-assembled nanoholes, lateral quantum-dot (QD) molecules, and rolled-up nanotubes. We overgrow InAs QDs with GaAs and apply atomical
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::99205d4c8200ec6665d3f3264368f16d
https://doi.org/10.1109/jstqe.2002.804235
https://doi.org/10.1109/jstqe.2002.804235
Publikováno v:
Physica E: Low-dimensional Systems and Nanostructures. 13:969-973
Strainedsemicond uctor bilayers are releasedfrom their substrate andformedinto free-stand ing tubes, rod s and rings on semiconductor surfaces. We present nanotubes based on the InGaAs=GaAs, SiGe=Si, andInGaP material system. The inner diameters of o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::522be5ce59a834d12635bc770564f685
https://doi.org/10.1016/s1386-9477(02)00247-3
https://doi.org/10.1016/s1386-9477(02)00247-3
Publikováno v:
Materials Science and Engineering: C. 19:393-396
Strained semiconductor bilayers are released from their substrate and formed into free-standing micro- and nano-objects (MNOs) on semiconductor substrates. We fabricate ultrathin SiGe ring-like vertical membranes and investigated their formation proc
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::92e2cbca5edc01178a82024093edffb4
https://doi.org/10.1016/s0928-4931(01)00428-3
https://doi.org/10.1016/s0928-4931(01)00428-3