Zobrazeno 1 - 10
of 53
pro vyhledávání: '"Ch.‐Y. Wang"'
Publikováno v:
Journal of physiology and pharmacology : an official journal of the Polish Physiological Society. 72(5)
The aim of this study was to determine whether endoplasmic reticulum (ER) stress is involved in the apoptosis of granulosa cells in patients with polycystic ovary syndrome (PCOS). A total of 116 patients undergoing in vitro fertilization/intracytopla
Autor:
V. Cimalla, Anja Eisenhardt, Stefan Krischok, Marcel Himmerlich, Theresa Berthold, Ch. Y. Wang, Oliver Ambacher
Publikováno v:
physica status solidi (a). 213:831-838
authoren The interaction of defect-rich nanocrystalline indium oxide films, which have previously shown to exhibit excellent ozone sensing properties, with O3, O2, and H2O molecules is investigated using ultra-violet and X-ray photoelectron spectrosc
Publikováno v:
Russian Journal of Plant Physiology. 56:546-550
An efficient system for in vitro regeneration of red leaf beet, a variety of leaf beet (Beta vulgaris L. var cicla L.) generally used to decorate parterre and to prepare betacyanin, was developed for the first time in the present study. Shoot tip and
Publikováno v:
Journal of Alloys and Compounds. 453:271-281
A thermodynamic database for the ZrO2–Sm2O3–Al2O3 system is derived using CALPHAD approach taking into account experimental data on isothermal sections and liquidus surface. The compound energy formalism and two-sublattice partially ionic liquid
Publikováno v:
Sensors and Actuators B: Chemical. 130:589-593
In 2 O 3 nanoparticles were deposited by low-temperature metal organic chemical vapor deposition. The response of 10-nm thick In 2 O 3 particle containing layers to NO x and O 2 gases is investigated. The lowest detectable NO x concentration is ∼20
Autor:
V. Cimalla, Rafael García, Juan G. Lozano, Ch. Y. Wang, Vadim Lebedev, Francisco M. Morales, David González, Oliver Ambacher
Publikováno v:
physica status solidi c. 5:514-517
The occurrence of cubic indium nitride thin layers grown by molecular beam epitaxy on top of c-plane sapphire substrates modified by an intermediate layer of cubic indium oxide is reported. An orientation relationship between the (0001) plane of Al2O
Autor:
Vadim Lebedev, Th. Kups, David González, V. Cimalla, Vladimir Polyakov, Stefan Krischok, Francisco M. Morales, J. A. Schaefer, Ch. Y. Wang, Juan G. Lozano, S. Hauguth, Frank Schwierz, Marcel Himmerlich, Oliver Ambacher
Publikováno v:
physica status solidi c. 5:495-498
The structural, chemical and electron transport properties of In2O3/InN heterostructures and oxidized InN epilayers are reported. It is shown that the accumulation of electrons at the InN surface can be manipulated by the formation of a thin surface
Publikováno v:
Sensors and Actuators B: Chemical. 129:467-472
The NO x and O 2 sensing properties of highly textured indium oxide In 2 O 3 thin films grown by metal organic chemical vapor deposition (MOCVD) technique have been investigated as a function of the operation temperature and partial pressure. The sen
Publikováno v:
Thin Solid Films. 515:6611-6614
Tuning of structural and electrical properties of indium oxide (In 2 O 3 ) films by means of metal organic chemical vapor deposition is demonstrated. Phase selective growth of rhombohedral In 2 O 3 (0001) and body-centered cubic In 2 O 3 (001) polyty
Autor:
Ch. Y. Wang, Vinayak Tilak, V. Cimalla, Vadim Lebedev, Gernot Ecke, Peter Micah Sandvik, Muhammad Ali, Oliver Ambacher, Th. Stauden
Publikováno v:
Sensors and Actuators B: Chemical. 123:779-783
Depletion-mode 4H-SiC field effect transistors (FETs) responding down to 0.002 mbar of NOx gas at a temperature of 300 °C were realized. A mixture of indium oxide (InOx) and vanadium oxide (VOx) was deposited by RF magnetron reactive sputtering as a