Zobrazeno 1 - 10
of 31
pro vyhledávání: '"Cesar Magen"'
Autor:
Enrique Navarro, María Alonso, Ana Ruiz, Cesar Magen, Unai Urdiroz, Federico Cebollada, Lluís Balcells, Benjamín Martínez, Jesús M. González, F. Javier Palomares
Publikováno v:
AIP Advances, Vol 11, Iss 2, Pp 025220-025220-5 (2021)
We investigate the low temperature magnetic behavior of three epitaxial Co/Ag multilayers, grown onto MgO (001) substrates, with a nominal content per period of either half a monolayer or one monolayer of Co, and either 8 or 16 Ag monolayers. The sam
Externí odkaz:
https://doaj.org/article/4662c602bd9146b8aff3e7f5b22865b4
Autor:
Elias Ferreiro-Vila, Lucia Iglesias, Irene Lucas del Pozo, Noa Varela-Dominguez, Cong Tinh Bui, Beatriz Rivas-Murias, Jose M. Vila-Fungueiriño, Pilar Jimenez-Cavero, Cesar Magen, Luis Morellon, Victor Pardo, Francisco Rivadulla
Publikováno v:
APL Materials, Vol 7, Iss 3, Pp 031109-031109-6 (2019)
Oxide spinels of general formula AB2O4 (A = Mg2+, Fe2+; B = Al3+, Cr3+, etc.) constitute one of the most abundant crystalline structures in mineralogy. In this structure, cations distribute among octahedral and tetrahedral sites, according to their s
Externí odkaz:
https://doaj.org/article/2229d7ca6ec74b08abfc09c69cab204e
Phase Competitions behind the Giant Magnetic Entropy Variation: Gd5Si2Ge2 and Tb5Si2Ge2 Case Studies
Autor:
Ana Lúcia Pires, João Horta Belo, Armandina Maria Lima Lopes, Isabel T. Gomes, Luis Morellón, Cesar Magen, Pedro Antonio Algarabel, Manuel Ricardo Ibarra, André Miguel Pereira, João Pedro Araújo
Publikováno v:
Entropy, Vol 16, Iss 7, Pp 3813-3831 (2014)
Magnetic materials with strong spin-lattice coupling are a powerful set of candidates for multifunctional applications because of their multiferroic, magnetocaloric (MCE), magnetostrictive and magnetoresistive effects. In these materials there is a s
Externí odkaz:
https://doaj.org/article/e43675b3739f47f5b27b921a88775ca5
Autor:
Aleksandra Koroleva, Thoai‐Khanh Khuu, César Magén, Hervé Roussel, Carmen Jiménez, Céline Ternon, Elena‐Ioana Vatajelu, Mónica Burriel
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 11, Pp n/a-n/a (2024)
Abstract The rapid development of brain‐inspired computing requires new artificial components and architectures for its hardware implementation. In this regard, memristive devices emerged as potential candidates for artificial synapses because of t
Externí odkaz:
https://doaj.org/article/8aef923f488d44418027af739cddbaa1
Autor:
Cesar Magen
Publikováno v:
Proceedings of the European Microscopy Congress 2020.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::847bf4681ea404c7f0a3acb910b0fe96
https://doi.org/10.22443/rms.emc2020.1181
https://doi.org/10.22443/rms.emc2020.1181
Autor:
Rubén Corcuera, Pilar Jiménez-Cavero, Rafael Pérez del Real, Francisco Rivadulla, Rafael Ramos, José Ignacio Morales-Aragonés, Soraya Sangiao, César Magén, Luis Morellón, Irene Lucas
Publikováno v:
APL Materials, Vol 12, Iss 8, Pp 081109-081109-8 (2024)
The use of magnetic garnets in new technologies such as spintronic devices requires fine-structured thin films. Classical fabrication techniques for these materials, typically physical vapor deposition methods, lead to excellent magnetic behavior. Ho
Externí odkaz:
https://doaj.org/article/2728efa83dbe4b80991c83280adf6366
Autor:
Eduardo Barriuso, Ricardo Jiménez, Eric Langenberg, Panagiotis Koutsogiannis, Ángel Larrea, Manuel Varela, César Magén, Pedro A. Algarabel, Miguel Algueró, José A. Pardo
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 5, Pp n/a-n/a (2024)
Abstract Films of ferroelectric hafnia have hitherto been deposited on electrodes with a non‐fluorite crystal structure. As a result, they are polycrystalline, contain fractions of non‐ferroelectric polymorphs or have poor crystal quality. Here,
Externí odkaz:
https://doaj.org/article/a11eb48234674d54b7d1c6984e0c899f
Autor:
Tingfeng Song, Panagiotis Koutsogiannis, César Magén, José A. Pardo, Florencio Sánchez, Ignasi Fina
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Ferroelectric hafnia is one of the most promising materials for next generation of non‐volatile memory devices. Several strategies have demonstrated to be of interest to improve its functional properties. Interface engineering, realized by
Externí odkaz:
https://doaj.org/article/6f1f72ef72f04b57b433a5478ed16caa
Publikováno v:
APL Materials, Vol 12, Iss 1, Pp 011113-011113-10 (2024)
The physical properties of perovskite oxide thin films are governed by the subtle interplay between chemical composition and crystal symmetry variations, which can be altered by epitaxial growth. In the case of perovskite-type multiferroic thin films
Externí odkaz:
https://doaj.org/article/241d207fec4a46c096b51ca97764a2db
