Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Cengiz Balkas"'
Autor:
Adrian Powell, Calvin H. Carter, Joseph John Sumakeris, Cengiz Balkas, Cem Basceri, H. McD. Hobgood, R.T. Leonard, D.P. Malta, I.I. Khlebnikov, Yuri I. Khlebnikov, Michael James Paisley, Elif Berkman, Albert A. Burk, M.F. Brady, Vijay Balakrishna, Eugene Deyneka, Valeri F. Tsvetkov, Michael J. O'Loughlin
Publikováno v:
Materials Science Forum. :3-6
Availability of high-quality, large diameter SiC wafers in quantity has bolstered the commercial application of and interest in both SiC- and nitride-based device technologies. Successful development of SiC devices requires low defect densities, whic
Autor:
Mrityunjay Sharma, Matthew D. Roth, Cengiz Balkas, V.D. Heydemann, Nikolay K. Yushin, Shao Ping Wang, William C. Mitchel
Publikováno v:
Materials Science Forum. :135-138
Publikováno v:
Materials Science Forum. :79-82
Autor:
Z-Q. Fang, W. C. Mitchel, S. R. Smith, Cengiz Balkas, Yuri I. Khlebnikov, David C. Look, William D. Mitchell, Igor Khlebnikov, Cem Basceri, H. E. Smith
Publikováno v:
Journal of Applied Physics. 100:043706
Temperature dependent Hall effect (TDH), low temperature photoluminescence (LTPL), secondary ion mass spectrometry (SIMS), optical admittance spectroscopy (OAS), and thermally stimulated current (TSC) measurements have been made on 6H-SiC grown by th