Zobrazeno 1 - 2
of 2
pro vyhledávání: '"Ceng Kong"'
Publikováno v:
Applied Mechanics and Materials. :1535-1539
In this letter, a high breakdown voltage GaN HEMT device fabricated on semi-insulating self-standing GaN substrate is presented. High quality AlGaN/GaN epilayer was grown on self-standing GaN substrate by metal organic chemical vapor deposition. A 0.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::045392093973e02a83c91204248527a2
https://doi.org/10.4028/www.scientific.net/amm.347-350.1535
https://doi.org/10.4028/www.scientific.net/amm.347-350.1535
Publikováno v:
2014 IEEE International Conference on Electron Devices and Solid-State Circuits.
High quality thin barrier layer In 0.18 Al 0.82 N/GaN heterostructure was grown by metal-organic chemical vapor deposition (MOCVD). A 0.15 µm gate InAlN/GaN HEMT was fabricated with 1A/mm drain current at zero gate bias. The device show good pinch-o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a5266ec537ee44bdd33e48265675eb35
https://doi.org/10.1109/edssc.2014.7061277
https://doi.org/10.1109/edssc.2014.7061277