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Publikováno v:
Diamond and Related Materials. 19:382-388
A CVD process with a high density of CNTs has been developed on doped silicon material thanks to plasma pre-treatment of the catalyst. With this process small diameter double and triple wall CNTs with an average diameter of 3.8 nm have been grown. Th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ce20cf0daef99c77be69c588a0ab4343
https://doi.org/10.1016/j.diamond.2009.11.017
https://doi.org/10.1016/j.diamond.2009.11.017
