Zobrazeno 1 - 10
of 15
pro vyhledávání: '"Cedric Rocha Leão"'
Autor:
Cedric Rocha Leão
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USPUniversidade de São PauloUSP.
No presente trabalho, efetuamos um extensivo estudo das propriedades eletrônicas e estruturais de nanofios de silcio (Si NWs) utilizando simulações computacionais totalmente ab-initio (metodo do DFT). Mostramos que nestes sistemas, diferentes face
Publikováno v:
Journal of Biomedical Materials Research Part B: Applied Biomaterials. 107:2273-2280
We studied the mechanical behavior of bovine pericardium (BP) after anticalcification treatment using hyaluronic acid (HA) derivative. To simulate the physiological environment and stimulate the calcification process, the BP samples were immersed int
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f6a76587673aceb7d26602c313082e3
https://doi.org/10.1002/jbm.b.34319
https://doi.org/10.1002/jbm.b.34319
Autor:
Cedric Rocha Leão, Enesio Marinho
Monoclinic bismuth vanadate (BiVO$_4$) is a promising $n$-type semiconductor for applications in sunlight-driven water splitting. Several studies have shown that its photocatalytic activity is greatly enhanced by high concentrations of Mo and W dopan
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e868bc3c50556f5409b64005d1794bb8
Publikováno v:
Journal of Alloys and Compounds. 720:47-53
We have performed a comprehensive study of electrical properties at high temperatures of single-phase BiFeO3 nanoparticles. Our results revealed a strong dependence of electrical resistivity behavior and activation energy on thermal cycle due to adso
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::71c816dcb4fffbe9d9148411f1b2f1fb
https://doi.org/10.1016/j.jallcom.2017.05.191
https://doi.org/10.1016/j.jallcom.2017.05.191
Publikováno v:
RSC Advances. 7:32383-32390
Gallium telluride presents interesting properties for applications in optoelectronic devices, such as solar panels and radiation detectors. These applications, however, have been hindered due to the low mobility of charge carriers and short lifetime
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b97320677026186473894199d85436db
https://doi.org/10.1039/c7ra03369a
https://doi.org/10.1039/c7ra03369a
Autor:
Yexiang Tong, Xihong Lu, Yat Li, Fang Qian, Gongming Wang, Jin Z. Zhang, Cedric Rocha Leão, Yichuan Ling, Vincenzo Lordi
Publikováno v:
The Journal of Physical Chemistry C. 117:10957-10964
We demonstrate hydrogenation as a facile method to significantly enhance the performance of BiVO4 films for photoelectrochemical water oxidation. Hydrogenation was performed for BiVO4 films by annealing them in hydrogen atmosphere at elevated tempera
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cbdd3ec100003e76bc777dd006f03807
https://doi.org/10.1021/jp401972h
https://doi.org/10.1021/jp401972h
Publikováno v:
CONICET Digital (CONICET)
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Consejo Nacional de Investigaciones Científicas y Técnicas
instacron:CONICET
Gallium telluride is a layered material with high photoresponse and is very promising for applications in optoelectronic devices such as photovoltaic cells or radiation detectors. We analyze how the properties of thin films of this material scale wit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e4cc4fb7ca54a92d9fcac9f77b4da9a5
https://doi.org/10.1063/1.5021259
https://doi.org/10.1063/1.5021259
Publikováno v:
Nano Letters. 8:1866-1871
Several experimental groups have achieved effective n- and p-type doping of silicon nanowires (SiNWs). However, theoretical analyses on ultrathin SiNWs suggest that dopants tend to segregate to their surfaces, where they would combine with defects su
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::05d21ec8ddd88ec66ab398156e62b662
https://doi.org/10.1021/nl080403d
https://doi.org/10.1021/nl080403d
Publikováno v:
Nano Letters. 7:1172-1177
We show, using ab initio calculations based on density functional theory, that for hydrogen-passivated Si nanowires (SiNWs), the relative contribution of surface atoms to the band-edge states varies according to the way these surface atoms are bonded
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c91a794e48e859ef6b7e1ec18b42f2ad
https://doi.org/10.1021/nl0628697
https://doi.org/10.1021/nl0628697
Autor:
Cedric Rocha Leão
Publikováno v:
Biblioteca Digital de Teses e Dissertações da USP
Universidade de São Paulo (USP)
instacron:USP
Universidade de São Paulo (USP)
instacron:USP
No presente trabalho, efetuamos um extensivo estudo das propriedades eletrônicas e estruturais de nanofios de silcio (Si NWs) utilizando simulações computacionais totalmente ab-initio (metodo do DFT). Mostramos que nestes sistemas, diferentes face
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::297eea2f6b24e20aed4f60fff57e33a2
https://doi.org/10.11606/t.43.2008.tde-19112008-104834
https://doi.org/10.11606/t.43.2008.tde-19112008-104834