Zobrazeno 1 - 10
of 26
pro vyhledávání: '"Cedric Lacam"'
Autor:
Mattias Thorsell, Herbert Zirath, Cedric Lacam, Anna Malmros, Hans Hjelmgren, Piero Gamarra, Niklas Rorsman, Sylvain Delage
Publikováno v:
IEEE Transactions on Electron Devices. 66:364-371
The impact of varying the GaN channel layer thickness ( ${t}_{\text {ch}}$ ) in InAlGaN/AlN/GaN HEMTs with C-doped AlGaN back barriers is investigated. ${t}_{\text {ch}}$ was 50, 100, and 150 nm, and the gate length of the fabricated HEMTs ranged fro
Autor:
Eric Chartier, Piero Gamarra, Cedric Lacam, P. Altuntas, D. Lancereau, M. Oualli, O. Patard, C. Potier, L. Teisseire, Christian Dua, Stéphane Piotrowicz, J.C. Jacquet, Sylvain Delage
Publikováno v:
Microelectronics Reliability. :418-422
On-wafer short term step-stress tests were carried out to evaluate InAlGaN/GaN HEMT devices. Three types of transistor were studied, each one having a specific two dielectric layer passivation. The results of these tests demonstrate that the upper la
Autor:
Mehdi Rzin, Jean-Marc Routoure, Laurence Méchin, Farid Medjdoub, Bruno Guillet, Piero Gamarra, Cedric Lacam
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, pp.1-4. ⟨10.1109/TED.2019.2945296⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, pp.1-4. ⟨10.1109/TED.2019.2945296⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩
IEEE Transactions on Electron Devices, 2019, 66 (12), pp.5080-5083. ⟨10.1109/TED.2019.2945296⟩
This article reports on sub-10-nm quaternary barrier InAlGaN/GaN high electron mobility transistors (HEMTs) grown by metal-organic-vapor-phase-epitaxy (MOVPE) with an in situ SiN passivation layer and an ultrashort gate length of 200 nm. Two batches
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a32964386b4f3d4b6a938498e019a747
https://hal.archives-ouvertes.fr/hal-02356735
https://hal.archives-ouvertes.fr/hal-02356735
Autor:
Stéphane Piotrowicz, N. Michel, M. Oualli, Eric Chartier, Jean-Claude Jacquet, O. Patard, Cedric Lacam, C. Potier, Christian Dua, Piero Gamarra, Philippe Altuntas, Sylvain Delage
Publikováno v:
International Journal of Microwave and Wireless Technologies. 10:39-46
This paper presents performances achieved with InAlGaN/GaN HEMTs with 0.15 µm gate length on SiC substrate. Technology Computer Aided Design simulations were used to optimize the heterostructure. Special attention was paid to the design of the buffe
Autor:
Pierre Ruterana, H. Ben Ammar, Cedric Lacam, Piero Gamarra, Magali Morales, Albert Minj, M. P. Chauvat
Publikováno v:
Journal of Microscopy. 268:269-275
Defects in quaternary InAlGaN barriers and their effects on crystalline quality and surface morphology have been studied. In addition to growth conditions, the quality of the GaN template may play an important role in the formation of defects in the
Autor:
Farid Medjdoub, Laurence Méchin, Pierre Ruterana, Cedric Lacam, Jean-Marc Routoure, Mehdi Rzin, Bruno Guillet, Piero Gamarra, Magali Morales
Publikováno v:
IEEE Transactions on Electron Devices. 64:2820-2825
In this paper we investigated the gate–drain access region spacing ( $L_{\mathrm {GD}})$ effect on electrical and noise performance of InAlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) using in situ SiN ca
Autor:
J.C. Jacquet, Piero Gamarra, Eric Chartier, Stéphane Piotrowicz, Sylvain Delage, C. Potier, M. Oualli, N. Michel, P. Altuntas, Christian Dua, Michel Prigent, Jean-Christophe Nallatamby, Cedric Lacam, O. Patard
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC)
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
2019 14th European Microwave Integrated Circuits Conference (EuMIC), Sep 2019, Paris, France. pp.41-44, ⟨10.23919/EuMIC.2019.8909641⟩
This article presents the performances obtained on a $0.15 \mu \mathrm{m}$ gate length InAlGaN/GaN HEMT technology on SiC substrate. This technology uses a back-barrier buffer layer to ensure the confinement of electrons in the channel, which minimiz
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5766b9bd9074cac30bff4ad98d06099b
https://hal.archives-ouvertes.fr/hal-02460407
https://hal.archives-ouvertes.fr/hal-02460407
Autor:
J. Gruenenpuett, Piero Gamarra, Stéphane Piotrowicz, Eric Chartier, J.C. Jacquet, N. Michel, M. Oualli, Sylvain Delage, Christian Dua, Cedric Lacam, P. Altuntas, L. Trinh-Xuan, O. Patard, Christophe Chang, C. Potier
Publikováno v:
2019 14th European Microwave Integrated Circuits Conference (EuMIC).
This paper presents the measurement results of a MMIC power amplifiers (PA), based on InAlGaN/GaN HEMT technology, for Ka band applications. The three-stages MMIC is operating within a bandwidth of [25-31] GHz and demonstrate over this bandwidth a sa
Autor:
P. Altuntas, Jorge Pereira, O. Patard, Christophe Gaquiere, Piero Gamarra, Sylvain Delage, Nicolas Defrance, N. Michel, Jean-Claude De Jaeger, Cedric Lacam, Sébastien Aroulanda
Publikováno v:
Journal of Vacuum Science & Technology A
Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.041001. ⟨10.1116/1.5090106⟩
Journal of Vacuum Science & Technology A, 2019, 37 (4), pp.041001. ⟨10.1116/1.5090106⟩
International audience; This paper reports on atomic layer etching of several III-N materials such as GaN, AlN, AlGaN, and InAlGaN based on a sequential surface modification by chlorine adsorption followed by a low energy Ar plasma exposure to remove
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82e5b125c6148c2243b73272d1235c15
https://hal.archives-ouvertes.fr/hal-03139113
https://hal.archives-ouvertes.fr/hal-03139113
Autor:
Sławomir Kret, Marie Pierre Chauvat, Cedric Lacam, Sylvain Delage, Pierre Ruterana, Ranim Mohamad, Viwanou Hounkpati, Piero Gamarra, Jun Chen
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩
Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩
Journal of Applied Physics, American Institute of Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩
Journal of Applied Physics, 2019, 125 (21), pp.215707. ⟨10.1063/1.5088109⟩
Due to its intrinsic properties and the possible lattice match to GaN, InAlN is expected to allow the fabrication of optimal high electron mobility transistors for high power and high frequency applications. However, the crystal quality of InAlN near
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72fec58e13a38fc7a910733dbc9a8f9a
https://hal.archives-ouvertes.fr/hal-02335333
https://hal.archives-ouvertes.fr/hal-02335333