Zobrazeno 1 - 10
of 203
pro vyhledávání: '"Cedric, Huyghebaert"'
Publikováno v:
Nature Communications, Vol 13, Iss 1, Pp 1-5 (2022)
Graphene and related two-dimensional (2D) materials have remained an active field of research in science and engineering for over fifteen years. Here, the authors investigate why the transition from laboratories to fabrication plants appears to lag b
Externí odkaz:
https://doaj.org/article/563368243f69483da6cb209d2edd6670
Publikováno v:
Nature Communications, Vol 11, Iss 1, Pp 1-5 (2020)
The importance of statistical analyses on 2D materials-based electronic devices and circuits is sometimes overlooked. Here the authors discuss the most pressing integration issues for such devices and emphasize the need for yield, variability, reliab
Externí odkaz:
https://doaj.org/article/cf9888c2f89c4402b00519376d07fb64
Autor:
Yashwanth Balaji, Quentin Smets, Cesar Javier Lockhart De La Rosa, Anh Khoa Augustin Lu, Daniele Chiappe, Tarun Agarwal, Dennis H. C. Lin, Cedric Huyghebaert, Iuliana Radu, Dan Mocuta, Guido Groeseneken
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 6, Pp 1048-1055 (2018)
2-D transition metal dichalcogenides (TMDs) are promising materials for CMOS application due to their ultrathin channel with excellent electrostatic control. TMDs are especially well suited for tunneling field-effect transistors (TFETs) due to their
Externí odkaz:
https://doaj.org/article/b3e6abfea7bb4f1db4bad4d5dfcd0818
Autor:
Chenghan Wu, Steven Brems, Didit Yudistira, Daire Cott, Alexey Milenin, Kevin Vandersmissen, Arantxa Maestre, Alba Centeno, Amaia Zurutuza, Joris Van Campenhout, Cedric Huyghebaert, Dries Van Thourhout, Marianna Pantouvaki
Publikováno v:
Laser & Photonics Reviews.
Autor:
César J. Lockhart de la Rosa, Goutham Arutchelvan, Alessandra Leonhardt, Cedric Huyghebaert, Iuliana Radu, Marc Heyns, Stefan De Gendt
Publikováno v:
APL Materials, Vol 6, Iss 5, Pp 058301-058301-6 (2018)
Ultra-thin MoS2 film doping through surface functionalization with physically adsorbed species is of great interest due to its ability to dope the film without reduction in the carrier mobility. However, there is a need for understanding how the thic
Externí odkaz:
https://doaj.org/article/af28f4d9502c4e30aac03a8193ef5a04
Autor:
Chenghan Wu, Zheng Wang, Julien Jussot, Steven Brems, Vivek Mootheri, Cedric Huyghebaert, Joris Van Campenhout, Marianna Pantouvaki, Dries Van Thourhout
Publikováno v:
Conference on Lasers and Electro-Optics.
We experimentally demonstrated >10 dB extinction ratio (ER) at 4 Vpp with a 50µm-long double-layer graphene electro-absorption modulator (DLG EAM) integrated on a silicon slot waveguide. Both the modulation depth (0.2dB/µm) and efficiency (0.070 dB
Autor:
Yuanyuan Shi, Benjamin Groven, Quentin Smets, Surajit Sutar, Sreetama Banerjee, Henry Medina, Xiangyu Wu, Cedric Huyghebaert, Steven Brems, Dennis Lin, Pierre Morin, Matty Caymax, Inge Asselberghs, Iuliana Radu
Publikováno v:
IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
2021 IEEE International Electron Devices Meeting (IEDM)
Autor:
Valentina Spampinato, Alexis Franquet, Steven Brems, Marina Y. Timmermans, Maxim Korytov, Emily Gallagher, Yide Zhang, Wilfried Alaerts, Thierry Conard, Ehsan Jazaeri, Thomas Nuytten, Masoud Dialameh, Cedric Huyghebaert, Stefanie Sergeant, Ivan Pollentier, Johan Meersschaut
Publikováno v:
Journal of Micro/Nanopatterning, Materials, and Metrology. 20
Background: An extreme ultraviolet (EUV)-transparent pellicle must be used during lithography to protect the photomask from fall-on particles. A pellicle made of free-standing carbon nanotube (CNT) films stops particles despite the presence of gaps w
Autor:
Andre Stesmans, Ilya Shlyakhov, Inge Asselberghs, Valeri Afanas'ev, Michel Houssa, Ageeth A. Bol, Cedric Huyghebaert, Niels Bosman, Konstantin Iakoubovskii, Swati Achra, Iuliana Radu, Shijie Wang, Jianwei Chai, Ming Yang
Publikováno v:
Journal of Physics D: Applied Physics, 54(29):295101. Institute of Physics
Understanding the energy alignment of electronic bands, which originate from ultrathin MoS2 layers and metal electrodes attached to them, is crucial for the design of MoS2-based electronic devices. We have applied internal photoemission spectroscopy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::df3d078d9c9659ac3ef3102736bd2db0
https://lirias.kuleuven.be/handle/123456789/680485
https://lirias.kuleuven.be/handle/123456789/680485
Autor:
Deji Akinwande, Frank H. L. Koppens, Martha I. Serna, Lain-Jong Li, Stijn Goossens, Cedric Huyghebaert, H.-S. Philip Wong, Ching-Hua Wang
Publikováno v:
Nature
The development of silicon semiconductor technology has produced breakthroughs in electronics—from the microprocessor in the late 1960s to early 1970s, to automation, computers and smartphones—by downscaling the physical size of devices and wires