Zobrazeno 1 - 10
of 186
pro vyhledávání: '"Cecilia Metra"'
Autor:
William, Fornaciari, Federico, Reghenzani, Federico, Terraneo, Davide, Baroffio, Cecilia, Metra, Martin, Omana, Rodriguez Condia, Josie E., Matteo Sonza Reorda, Birke, Robert Renè Maria, Colonnelli, Iacopo, Mittone, Gianluca, Aldinucci, Marco, Gabriele, Mencagli, Francesco, Iannone, Filippo, Palombi, Giuseppe, Zummo, and Daniele Cesarini, Federico, Tesser
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______970::4da8690fef7d78e9929a531130140fac
https://hdl.handle.net/2318/1920390
https://hdl.handle.net/2318/1920390
Publikováno v:
2022 IEEE 28th International Symposium on On-Line Testing and Robust System Design (IOLTS).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8aa13f139bbd3492e4453c6e6b2efd9d
https://doi.org/10.1109/iolts56730.2022.9897808
https://doi.org/10.1109/iolts56730.2022.9897808
Autor:
Leila de Floriani, Hironori Kasahara, Forrest Shull, Jean-Luc Gaudiot, Steve Diamond, Cecilia Metra
Publikováno v:
2021 IEEE 45th Annual Computers, Software, and Applications Conference (COMPSAC).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe3bc68f5ce9b23f80ddb534d3656c29
https://doi.org/10.1109/compsac51774.2021.00304
https://doi.org/10.1109/compsac51774.2021.00304
Publikováno v:
Microelectronics Reliability. 135:114594
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::136fe5484b7a330d31a876a90119745c
https://doi.org/10.1016/j.microrel.2022.114594
https://doi.org/10.1016/j.microrel.2022.114594
Resistive Random Access Memories (ReRAMs) are considered amongst the most promising candidates to replace silicon-based memories. However, ReRAMs suffer from reliability issues associated to faults affecting their resistive elements and their selecto
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::589236ebff5a25465ef72ae93293a5e9
http://hdl.handle.net/11585/842646
http://hdl.handle.net/11585/842646
Photovoltaic (PV) systems are increasingly adopted as a source of green energy. Due to the high economic investment that they usually involve, their reliability is becoming of concern. Recent studies have proven that faults likely to affect the inver
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7fd4df6529f4cadfa5cd35caacbd37d8
http://hdl.handle.net/11585/668805
http://hdl.handle.net/11585/668805
Autor:
Cecilia Metra
Presents the introductory editorial for this issue of the publication.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______4094::31fea07005079415acbedff488accccc
http://hdl.handle.net/11585/681546
http://hdl.handle.net/11585/681546
Autor:
Cecilia Metra, Matteo Sonza Reorda
The papers in this special section focus on high dependability systems. The continuous scaling of microelectronic technology has enabled electronic devices to become more and more pervasive and widespread. Nowadays most of the objects surrounding us
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::969415a4f748406cee345ef0ea8da508
https://hdl.handle.net/11583/2976588
https://hdl.handle.net/11583/2976588
Analyses recently presented in the literature have shown that the Bias Temperature Instability (BTI) ageing phenomenon may increase significantly the susceptibility to soft errors (SEs) of robust latches. Particularly, this is the case of low-cost ro
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::debf6e406346655545a53e65d6f1db48
http://hdl.handle.net/11585/585719
http://hdl.handle.net/11585/585719
Publikováno v:
IEEE Transactions on Very Large Scale Integration (VLSI) Systems. 25:238-246
The generation of significant power droop (PD) during at-speed test performed by Logic Built-In Self Test (LBIST) is a serious concern for modern ICs. In fact, the PD originated during test may delay signal transitions of the circuit under test (CUT)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a878c4c457833f116c92764d3f9be123
https://doi.org/10.1109/tvlsi.2016.2572606
https://doi.org/10.1109/tvlsi.2016.2572606