Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Cecelia C. Pena"'
Autor:
Jerry D. Harris, Emily A. Wade, Emmaline G. Ellison, Cecelia C. Pena, Stephen C. Bryant, Nicholas L. McKibben, Allison J. Christy, Kevin O. Laughlin, Ashley E. Harris, Kenrik V. Goettsche, Chad E. Larson, Seth M. Hubbard, Jonathan E. Cowen, Josh Eixenberger, David Estrada, Jennifer R. Chase
Publikováno v:
Catalysts; Volume 12; Issue 10; Pages: 1099
Zinc oxide is an environmentally friendly and readily synthesized semiconductor with many industrial applications. ZnO powders were prepared by alkali precipitation using different [Zn(acetate)2(amine)x] compounds to alter the particle size and aspec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::66795f9befff92086dac3b9f926e85fb
https://pubmed.ncbi.nlm.nih.gov/36405766
https://pubmed.ncbi.nlm.nih.gov/36405766
Synthesis and characterization of ZnO nanoparticles and their use in photocatalyzing malachite green
Autor:
Darryl Butt, Joe Croteau, Jonathan E. Cowen, Ashley E. Harris, Cecelia C. Pena, Jerry D. Harris
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33313a7d9e36bc944322d9a263de0122
https://doi.org/10.1021/scimeetings.0c02041
https://doi.org/10.1021/scimeetings.0c02041
Autor:
Amanda R. Boydstun, Nicholas L. McKibben, Aaron Thurber, Lloyd Lowe, Theron R. Fereday, Brian J. Frost, Seth M. Hubbard, Christian T. Wall, Jerry D. Harris, Jason Brotherton, Jennifer L. Strunk, Pamela Walker, Jesse S. Hyslop, Alex Punnoose, William B. Knowlton, Joanna R. Rusch, Cecelia C. Pena, Shem Purnell, Blake Rapp
Publikováno v:
Materials Science in Semiconductor Processing. 38:278-289
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02e70746dd08b53f0a3db49639134118
https://doi.org/10.1016/j.mssp.2015.04.001
https://doi.org/10.1016/j.mssp.2015.04.001
Autor:
Jesse S, Hyslop, Amanda R, Boydstun, Theron R, Fereday, Joanna R, Rusch, Jennifer L, Strunk, Christian T, Wall, Cecelia C, Pena, Nicholas L, McKibben, Jerry D, Harris, Aaron, Thurber, Alex, Punnoose, Jason, Brotherton, Pamela, Walker, Lloyd, Lowe, Blake, Rapp, Shem, Purnell, William B, Knowlton, Seth M, Hubbard, Brian J, Frost
Publikováno v:
Materials science in semiconductor processing. 38
As an obvious candidate for a p-type dopant in ZnO, nitrogen remains elusive in this role. Nitrogen containing precursors are a potential means to incorporate nitrogen during MOCVD growth. One class of nitrogen-containing precursors are zinc acetate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::a01030955ec742a4182c607e43df6c04
https://pubmed.ncbi.nlm.nih.gov/26085801
https://pubmed.ncbi.nlm.nih.gov/26085801
Autor:
Cecelia C. Pena, Stephen C. Bryant, Jonathan E. Cowen, Jerry D. Harris, Ashley E. Harris, Allison J. Christy
Publikováno v:
Microscopy and Microanalysis. 22:1610-1611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0206bc3b4bb64d8859dd226deda3d3c9
https://doi.org/10.1017/s1431927616008898
https://doi.org/10.1017/s1431927616008898