Výsledky vyhledávání - "Catlow, C. R. A."

Report

Intrinsic point defects and the $n$- and $p$-type dopability of the narrow gap semiconductors GaSb and InSb

Autor: Buckeridge, J., Veal, T. D., Catlow, C. R. A., Scanlon, D. O.

Publikováno v: Phys. Rev. B 100, 035207 (2019)

The presence of defects in the narrow-gap semiconductors GaSb and InSb affects their dopability and hence applicability for a range of optoelectronic applications. Here, we report hybrid density functional theory based calculations of the properties

Externí odkaz: http://arxiv.org/abs/1907.13063

Zobrazit plný text záznamu

Report

Determination of the nitrogen vacancy as a shallow compensating center in GaN doped with divalent metals

Autor: Buckeridge, J., Catlow, C. R. A., Scanlon, D. O., Keal, T. W., Sherwood, P., Miskufova, M., Walsh, A., Woodley, S. M., Sokol, A. A.

We report accurate energetics of defects introduced in GaN on doping with divalent metals, focussing on the technologically important case of Mg doping, using a model which takes into consideration both the effect of hole localisation and dipolar pol

Externí odkaz: http://arxiv.org/abs/1412.1694

Zobrazit plný text záznamu

Report

Controlling bulk conductivity in topological insulators: Key role of anti-site defects

Autor: Scanlon, D. O., King, P. D. C., Singh, R. P., de la Torre, A., Walker, S. McKeown, Balakrishnan, G., Baumberger, F., Catlow, C. R. A.

Publikováno v: Advanced Materials, vol. 24, iss. 16, pp 2154-2158 (2012)

The binary Bi-chalchogenides, Bi2Ch3, are widely regarded as model examples of a recently discovered new form of quantum matter, the three-dimensional topological insulator (TI) [1-4]. These compounds host a single spin-helical surface state which is

Externí odkaz: http://arxiv.org/abs/1204.4063

Zobrazit plný text záznamu