Zobrazeno 1 - 10
of 155
pro vyhledávání: '"Catherine Dubourdieu"'
Autor:
Chun-Yu Liu, Lorenzo Celiberti, Régis Decker, Kari Ruotsalainen, Katarzyna Siewierska, Maximilian Kusch, Ru-Pan Wang, Dong Jik Kim, Israel Ibukun Olaniyan, Daniele Di Castro, Keisuke Tomiyasu, Emma van der Minne, Yorick A. Birkhölzer, Ellen M. Kiens, Iris C. G. van den Bosch, Komal N. Patil, Christoph Baeumer, Gertjan Koster, Masoud Lazemi, Frank M. F. de Groot, Catherine Dubourdieu, Cesare Franchini, Alexander Föhlisch
Publikováno v:
Communications Physics, Vol 7, Iss 1, Pp 1-7 (2024)
Abstract The wide tunability of strongly correlated transition metal (TM) oxides stems from their complex electronic properties and the coupled degrees of freedom. Among the perovskite oxides family, LaMO3 (M = Ti-Ni) allows an M-dependent systematic
Externí odkaz:
https://doaj.org/article/493833f792f4434a9ac4809649d62dab
Autor:
Haidong Lu, Dong-Jik Kim, Hugo Aramberri, Marco Holzer, Pratyush Buragohain, Sangita Dutta, Uwe Schroeder, Veeresh Deshpande, Jorge Íñiguez, Alexei Gruverman, Catherine Dubourdieu
Publikováno v:
Nature Communications, Vol 15, Iss 1, Pp 1-9 (2024)
Abstract HfO2-based thin films hold huge promise for integrated devices as they show full compatibility with semiconductor technologies and robust ferroelectric properties at nanometer scale. While their polarization switching behavior has been widel
Externí odkaz:
https://doaj.org/article/4f5ee4837dbb4177a3443d1b75c52766
Autor:
Rong Wu, Sebastian W. Schmitt, Florian Maudet, Dong Jik Kim, Veeresh Deshpande, Catherine Dubourdieu
Publikováno v:
Small Structures, Vol 5, Iss 5, Pp n/a-n/a (2024)
We report electrochemical metallization (ECM) resistive switching in polycrystalline YMnO3 memristive devices using Al as an active electrode. Al/YMnO3/Pt devices exhibit bipolar resistive switching with a high ROFF/RON ratio of 104, low operational
Externí odkaz:
https://doaj.org/article/afa96b4a982f4fe29eaa7d425834ea72
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Autor:
Rana Walied Ahmad, Rainer Waser, Florian Maudet, Onur Toprak, Catherine Dubourdieu, Stephan Menzel
Publikováno v:
Neuromorphic Computing and Engineering, Vol 4, Iss 3, p 034007 (2024)
Resistively switching electrochemical metallization memory cells are gaining huge interest since they are seen as promising candidates and basic building blocks for future computation-in-memory applications. However, especially filamentary-based memr
Externí odkaz:
https://doaj.org/article/a60b6be5ef684fcb9c61e5a1a7c2943a
Autor:
Sebastian W. Schmitt, Klaus Schwarzburg, George Sarau, Silke H. Christiansen, Sven Wiesner, Catherine Dubourdieu
Publikováno v:
APL Materials, Vol 8, Iss 6, Pp 061110-061110-8 (2020)
As a result of its indirect bandgap, emitting photons from silicon in an efficient way remains challenging. Silicon light emitters that can be integrated seamlessly on a CMOS platform have been demonstrated; however, none satisfies an ensemble of key
Externí odkaz:
https://doaj.org/article/88d6d26efd434a3a98b69da83cfc100a
Publikováno v:
Science and Technology of Advanced Materials, Vol 16, Iss 3 (2015)
SrTiO3 epitaxial growth by molecular beam epitaxy (MBE) on silicon has opened up the route to the monolithic integration of various complex oxides on the complementary metal-oxide–semiconductor silicon platform. Among functional oxides, ferroelectr
Externí odkaz:
https://doaj.org/article/37931c1b56ca4b6392dca9c18e65b870
Publikováno v:
ACS Applied Electronic Materials. 5:1478-1488
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4335e46d67ac581570bb9606611a5c6b
https://doi.org/10.1021/acsaelm.2c01492
https://doi.org/10.1021/acsaelm.2c01492
Autor:
Florian Maudet, Morgane Lebarbe, Dini Marlina, Adnan Hammud, Markus Wollgarten, Veeresh Deshpande, Catherine Dubourdieu
Publikováno v:
Oxide-based Materials and Devices XIV.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8980a26dd16409fe6fd9cc8263c5fe51
https://doi.org/10.1117/12.2664322
https://doi.org/10.1117/12.2664322
