Výsledky vyhledávání - "Catherine Chaix"

Plasma assisted molecular beam epitaxy of GaN with growth rates >2.6 µm/h

Autor: Thomas Huault, Feng Wu, Catherine Chaix, James S. Speck, Brian M. McSkimming

Publikováno v: Journal of Crystal Growth. 386:168-174

Plasma-assisted molecular beam epitaxial (PAMBE) growth of gallium nitride (GaN) was explored with a novel modification of a commercially available nitrogen plasma source. The modified nitrogen plasma source enabled a dramatic increase in the flux of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1dce2b328dc59c7c3491cff97fe0414a
https://doi.org/10.1016/j.jcrysgro.2013.10.013

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Psychose et toxicomanie en milieu carcéral

Autor: Radoine Haoui, Walter Albardier, Antoine Nouvel, Emmanuel Gallet, Catherine Chaix, Julien Billard, Gérard Laurencin

Publikováno v: Perspectives Psy. 45:380-388

L’abus de substance est un phenomene particulierement frequent dans la population psychotique, pouvant atteindre pratiquement un patient sur deux selon certaines etudes. Le but de cet article est de s’interesser a ce phenomene dans le cadre du mi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::e6463678f73faa62b0fbfcdc16f84327
https://doi.org/10.1051/ppsy/2006454380

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High active nitrogen flux growth of GaN by plasma assisted molecular beam epitaxy

Autor: Catherine Chaix, Brian M. McSkimming, James S. Speck

Publikováno v: Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 33:05E128

In the present study, the authors report on a modified Riber radio frequency (RF) nitrogen plasma source that provides active nitrogen fluxes more than 30 times higher than those commonly used for plasma assisted molecular beam epitaxy (PAMBE) growth

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::84d5ea5ce3ec4dded83b37ffc16faa5d
https://doi.org/10.1116/1.4928415

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Growth diagram of N-face GaN (0001¯) grown at high rate by plasma-assisted molecular beam epitaxy

Autor: Thomas Huault, James S. Speck, Hironori Okumura, Catherine Chaix, Brian M. McSkimming

Publikováno v: Applied Physics Letters. 104:012111

N-face GaN was grown on free-standing GaN (0001¯) substrates at a growth rate of 1.5 μm/h using plasma-assisted molecular beam epitaxy. Difference in growth rate between (0001¯) and (0001) oriented GaN depends on nitrogen plasma power, and the (00

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3f3f853fdf6aba1b9b58c89f5c93171e
https://doi.org/10.1063/1.4861746

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Effect of Arsenic Pressure on Donor and Acceptor Concentration in Si Doped MBE GaAs Layers

Autor: Gérard Neu, Catherine Chaix, J.-P. Contour, Alain Radisson

Publikováno v: Japanese Journal of Applied Physics. 29:1908

The influence of As/Ga flux ratio on the transport and optical properties of high purity Si-doped MBE GaAs has been investigated using two arsenic cells alternately or simultaneously. When the As produced from one cell increases by one order of magni

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::3db43ad29e6ac060d226df1351d27bb0
https://doi.org/10.1143/jjap.29.1908

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Techniques de production de plants de merisier (Prunus avium L.) par culture in vitro. Bouturage herbacé, bouturage de racines

Autor: Catherine Chaix

Publikováno v: Annales des Sciences Forestières 3 (39), 311-313. (1982)
Annales des sciences forestières
Annales des sciences forestières, INRA/EDP Sciences, 1982, 39 (3), pp.311-313

National audience; Dans le cadre de l’amélioration génétique du merisier (Prunus avium L.) on a expérimenté trois techniques de multiplication végétative en masse : culture in vitro, bouturage de racines, bouturage herbacé.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::76b93cdcb6722592afc40a1ea57d4439
http://prodinra.inra.fr/record/15907

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Development of molecular beam epitaxy of functional oxydes on semiconductors

Autor: Louahadj , Lamis

Publikováno v: Autre. Ecole Centrale de Lyon, 2014. Français. 〈NNT : 2014ECDL0038〉
Autre. Ecole Centrale de Lyon, 2014. Français. ⟨NNT : 2014ECDL0038⟩

The development of microelectronics industry has been, until recently, essentially based on the regular improvement of device performances thanks to the downscaling strategy as a continuity of Moore’s law. This evolution is now confronted to the in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::905b9531b3c7db2d045f1cc56f797c5b
https://theses.hal.science/tel-01162448

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