Zobrazeno 1 - 10
of 18
pro vyhledávání: '"Caterina Riva"'
Autor:
Stefano Greco, Paolo Monge, F. Bonoli, Andreas Nutsch, Maria Luisa Polignano, Roswitha Altmann, Michael Otto, Davide Codegoni, Andreas Liebold, G. Borionetti, Caterina Riva, Luca Castellano
Publikováno v:
Solid State Phenomena. :243-248
Methods for the analysis of the oxide-silicon interface were compared for their ability to reveal metal segregation at the interface and organic contamination. The impact of these contaminations on surface recombination velocity measurements, on capa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::203b0fba8c5d8d2267816520df3db89b
https://doi.org/10.4028/www.scientific.net/ssp.178-179.243
https://doi.org/10.4028/www.scientific.net/ssp.178-179.243
Autor:
Ivana Patoprsta, Paolo Monge, Vittorio Privitera, G. Borionetti, Maria Luisa Polignano, Caterina Riva, Jacopo Brivio, Davide Codegoni, Antonio Marino, F. Bonoli, Stefano Greco
Publikováno v:
ECS Transactions. 33:133-144
In this paper niobium is characterized as a silicon contaminant. It is shown that niobium is a relatively slow diffuser, with an intermediate diffusivity between very slow diffusers such as molybdenum and fast diffusers such as iron. Niobium is found
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f50443cbd6af19f384c8e46868187c2
https://doi.org/10.1149/1.3485688
https://doi.org/10.1149/1.3485688
Publikováno v:
Meccanica. 40:485-503
The issue of mechanical characterization of polysilicon used in micro electro mechanical systems (MEMS) is discussed in this paper. An innovative approach based on a fully on-chip testing procedure is described; two ad hoc designed electrostatically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::affdc48aafe81f8eefc644b8cbed8034
https://doi.org/10.1007/s11012-005-2135-9
https://doi.org/10.1007/s11012-005-2135-9
Publikováno v:
Microelectronics Reliability. 41:1003-1006
The deposition of WSi 2 on transistor gate in SiH 4 /WF 6 ambient produces strong variations into the active oxide layer, introducing a significant fluorine concentration into the dielectric. This phenomenon is here shown to have different effects on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4fa8f994babcee7c5c1353018acf925f
https://doi.org/10.1016/s0026-2714(01)00057-9
https://doi.org/10.1016/s0026-2714(01)00057-9
Publikováno v:
Solid-State Electronics. 39:1051-1054
The purpose of this paper is to analyze the impact of the thermal budget on the quality of furnace nitridated SiO2 layers in N2O ambient. After comparing the quality of various oxynitride layers prepared with different thermal budgets, it is shown th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7f5bff70c06b1b5f60a95a78229cb63
https://doi.org/10.1016/0038-1101(95)00412-2
https://doi.org/10.1016/0038-1101(95)00412-2
Autor:
Federico Pio, Constantin Papadas, Paolo Ghezzi, Gerard Ghibaudo, G. Pananakakis, Caterina Riva
Publikováno v:
IEEE Transactions on Electron Devices. 42:678-682
A model for the intrinsic retention characteristics of FLOTOX EEPROM cells is presented, which is based on the temperature dependence of the Fowler-Nordheim emission current. This model which has been successfully tested on single-poly-FLOTOX EEPROM
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7bf210243f46e2571778a1716280243
https://doi.org/10.1109/16.372071
https://doi.org/10.1109/16.372071
Publikováno v:
Microelectronics Journal. 25:577-582
The impact of the furnace nitridation time in N 2 O ambient on the quality of the Si/SiO 2 system is analyzed in detail. It is shown that, for a high temperature furnace nitridation process step, a long duration of nitridation may give rise to degrad
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::eedfe21319f77422f17ced6fd53d1c7d
https://doi.org/10.1016/0026-2692(94)90043-4
https://doi.org/10.1016/0026-2692(94)90043-4
Publikováno v:
Microelectronics Journal. 25:495-500
Thin oxide nitridation in N 2 O has been demonstrated to improve the dielectric characteristics in terms of charge to breakdown and trapping under current injection. In this work we compare the results obtained with the RTP and conventional oven nitr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e4550449561599737d918a44304e8e79
https://doi.org/10.1016/0026-2692(94)90033-7
https://doi.org/10.1016/0026-2692(94)90033-7
Publikováno v:
Microelectronics Reliability. 33:1657-1663
Accelerated reliability tests on thin oxide capacitors can be affected by series resistance effects at high stress conditions. The purpose of this work is to point out such problems both with measurements and simulations. It is shown that breakdown e
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c9cd37e65a33c5e08d28ec05630c179
https://doi.org/10.1016/0026-2714(93)90078-d
https://doi.org/10.1016/0026-2714(93)90078-d