Zobrazeno 1 - 10
of 16
pro vyhledávání: '"Caterina J. Clausen"'
Autor:
Christoph Koch, C. L. Manganelli, Giovanni Capellini, Inga A. Fischer, Henriette Tetzner, Stefano Chiussi, Jon Schlipf, Michael Oehme, Davide Spirito, Michael R. S. Huang, Ahmed Elsayed, Caterina J. Clausen, Jörg Schulze
Publikováno v:
Journal of Raman Spectroscopy. 52:1167-1175
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::61494ec934678f8d4292bd2f36aafc28
https://doi.org/10.1002/jrs.6098
https://doi.org/10.1002/jrs.6098
Autor:
Yasmine Elogail, Fritz Berkmann, Caterina J. Clausen, Inga A. Fischer, Linda A. Hänel, Daniel Schwarz, Jörg Schulze
Publikováno v:
Microelectronics Journal. 123:105404
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5cfda512e0e6ac282fa4a6d393ed100a
https://doi.org/10.1016/j.mejo.2022.105404
https://doi.org/10.1016/j.mejo.2022.105404
Autor:
D. Schwarz, D. Weibhaupt, M. M. Dettling, Michal Kern, Joris van Slageren, F. Berkmann, Caterina J. Clausen, H. S. Funk, Michael Oehme, Joerg Schulze
Publikováno v:
MIPRO
This work reports on the carrier mobilities in heavily doped, pseudomorphically grown Ge1-xSnx-epilayers with Sn-concentrations up to 9.2%. For this purpose, Ge1-xSnx-alloys were grown on a relaxed Ge virtual substrate on top of a commercial Si (100)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8b08a5c33b32db7c048e76ec9b040c2
https://doi.org/10.23919/mipro48935.2020.9245273
https://doi.org/10.23919/mipro48935.2020.9245273
Autor:
Inga A. Fischer, Torsten Wendav, D. Schwarz, Sebastian Koelling, Jörg Schulze, PM Paul Koenraad, Stefan Birner, Caterina J. Clausen, Christoph Koch, Giovanni Capellini, Kurt Busch, Michele Virgilio, Peter Zaumseil, Maria Cecilia da Silva Figueira, Michael R. S. Huang
Publikováno v:
Physical Review Materials, 4(2):024601. American Physical Society
While GeSn alloys with high Sn content constitute direct group-IV semiconductors, their growth on Si remains challenging. The deposition of a few monolayers of pure Sn on Ge and their overgrowth with Ge using molecular beam epitaxy can be a means of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1282c497e7150c27c6fbfa7f93d638f4
https://doi.org/10.1103/physrevmaterials.4.024601
https://doi.org/10.1103/physrevmaterials.4.024601
Publikováno v:
IEEE Photonics Journal, Vol 10, Iss 2, Pp 1-12 (2018)
Data transfer across millimeter-scale electrical wires is limited by both data rates and power density, which creates a performance bottleneck for semiconductor microchips in modern computer systems. Hence, silicon based platforms for optical communi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a208d9974b1fadeb90b3d0db3434fd2f
https://doi.org/10.1109/jphot.2018.2818662
https://doi.org/10.1109/jphot.2018.2818662
Autor:
Caterina J. Clausen, Michael Oehme, D. Schwarz, David Weißhaupt, H. S. Funk, P. Povolni, Joerg Schulze, Yasmine Elogail
Publikováno v:
42nd International Convention on Information and Communication Technology, Electronics and Microelectronics (MIPRO 2019)
MIPRO
MIPRO
The interest in group-IV based optoelectronic devices has increased due to a foreseeable future demand. The main advantage is the relatively simple integration into the modern Silicon-based Complementary Metal-Oxide-Semiconductor technology platform.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ee7bddff759b351fd5e2510b6df49a9a
https://hdl.handle.net/21.11116/0000-000A-58B0-C
https://hdl.handle.net/21.11116/0000-000A-58B0-C
Publikováno v:
Silicon Photonics: From Fundamental Research to Manufacturing.
In this paper, an ultra-thin buffer technology for the epitaxial growth of SixGe1-x-ySny structures on Si or Si-on-Insulator substrates by using molecular beam epitaxy is presented. This technology builds the basis for integrated photonic devices as
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::463694e186fed626b062ca7cf976bd16
https://doi.org/10.1117/12.2318011
https://doi.org/10.1117/12.2318011
Autor:
Michael Oehme, R. Koerner, Inga A. Fischer, D. Schwarz, R. Soref, L. A. Hanel, Jörg Schulze, Caterina J. Clausen
Publikováno v:
2017 IEEE International Electron Devices Meeting (IEDM).
We report on the fabrication of a Ge on Si photonic (SiP) device enabling light emission under reverse bias and light detection at forward bias, enabled by low-voltage switching Ge tunnel diodes (TDs) — The Zener-Emitter (ZE) [1] and the Esaki-Coll
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::799cba619a433a0b519a69dd86186119
https://doi.org/10.1109/iedm.2017.8268453
https://doi.org/10.1109/iedm.2017.8268453
Publikováno v:
2017 IEEE 14th International Conference on Group IV Photonics (GFP).
We present the Ge Zener-Emitter injection mechanism for synthesis of an indirect semiconductor optical amplifier (ISOA), featuring gain characteristics and electro-absorption modulation with extinction ratios > 14 dB by sufficient Moss-Burstein shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::246143360283a5db432fbc4615822f00
https://doi.org/10.1109/group4.2017.8082171
https://doi.org/10.1109/group4.2017.8082171
Autor:
Gerard Colston, Michael Oehme, Caterina J. Clausen, Joerg Schulze, Maksym Myronov, David Weisshaupt, Bernd Tillack, Florian Baerwolf, Inga A. Fischer
Publikováno v:
Semiconductor Science and Technology. 33:124017
Diodes incorporating undoped and Sb-doped Si x Ge1−x−y Sn y layers grown by molecular beam epitaxy with different alloy compositions and lattice-matched to Ge were fabricated and characterized experimentally. We discuss material as well as electr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4437cc27d480a22e4aa17d9912218bc3
https://doi.org/10.1088/1361-6641/aae3ab
https://doi.org/10.1088/1361-6641/aae3ab