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Cat-doping: A Novel Low-Temperature Impurity Doping Technology

Autor: Ruud E.I. Schropp

Publikováno v: Catalytic Chemical Vapor Deposition ISBN: 9783527818655

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0805509516de3c5d02f8656cde0e29f8
https://doi.org/10.1002/9783527818655.ch10

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Akademický článek

Phosphorous Catalytic‐Doping of Silicon Alloys for the Use in Silicon Heterojunction Solar Cells.

Autor: Liu, Yong, Pomaska, Manuel, Duan, Weiyuan, Kim, Do Yun, Köhler, Malte, Breuer, Uwe, Ding, Kaining

Publikováno v: Advanced Engineering Materials; Jun2020, Vol. 22 Issue 6, p1-5, 5p

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Combination of Plasma-Damage-Less Cat-CVD with a New Low Temperature Impurity Doping Method, Cat-Doping, for Improvement of Solar Cell Performance

Autor: Huynh, T.C.T., Terashima, S., Koyama, K., Nguyen, C.T., Matsumura, H.

32nd European Photovoltaic Solar Energy Conference and Exhibition; 606-609
This paper is to study on a new doping technology, Cat-doping, in which phosphorus or boron atoms can be doped into crystalline-silicon (c-Si) at temperatures as low as 8

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::19ead627867be4fc3514b9c97000ac8c

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Akademický článek

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping.

Autor: Duan, Weiyuan¹ (AUTHOR) w.duan@fz-juelich.de, Mains, Gilbert^1,2 (AUTHOR), Gebrewold, Habtamu Tsegaye^1,2 (AUTHOR), Bittkau, Karsten¹ (AUTHOR), Lambertz, Andreas¹ (AUTHOR), Xu, Binbin^1,2 (AUTHOR), Lauterbach, Volker¹ (AUTHOR), Eberst, Alexander^1,2 (AUTHOR), Nicholson, Nathan³ (AUTHOR), Korte, Lars³ (AUTHOR), Yaqin, Muhammad Ainul^1,2 (AUTHOR), Zhang, Kai^1,2 (AUTHOR), Yang, Qing^1,2 (AUTHOR), Rau, Uwe^1,2 (AUTHOR), Ding, Kaining¹ (AUTHOR) k.ding@fz-juelich.de

Publikováno v: Advanced Functional Materials. 1/15/2024, Vol. 34 Issue 3, p1-11. 11p.

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Cat-doping: Novel method for phosphorus and boron shallow doping in crystalline silicon at 80 °C

Autor: Tatsunori Ohta, Koichi Koyama, Trinh Cham Thi, Yuki Nakashima, Keisuke Ohdaira, Motoharu Miyamoto, Taro Hayakawa, Hideki Matsumura

Publikováno v: Journal of Applied Physics. 116(11):114502-114502-10

Phosphorus (P) or boron (B) atoms can be doped at temperatures as low as 80 to 350 °C, when crystalline silicon (c-Si) is exposed only for a few minutes to species generated by catalytic cracking reaction of phosphine (PH_3) or diborane (B_2H_6) wit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0f8e9da072dadcfb57e644dfb09d9097
http://hdl.handle.net/10119/12906

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