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Akademický článek
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Autor:
Zhang, Y., Haitjema, J., Liu, X., Johansson, F., Lindblad, A., Castellanos Ortega, S., Ottosson, N., Brouwer, A.M., Hohle, C.K.
Publikováno v:
Journal of Micro/Nanolithography, MEMS and MOEMS, 16(2):023510. SPIE
Advances in Patterning Materials and Processes XXXIV: 27 February–2 March 2017, San Jose, California, United States
Advances in Patterning Materials and Processes XXXIV
Advances in Patterning Materials and Processes XXXIV: 27 February–2 March 2017, San Jose, California, United States
Advances in Patterning Materials and Processes XXXIV
Several metal-containing molecular inorganic materials are currently considered as photoresists for extreme ultraviolet lithography (EUVL). This is primarily due to their high EUV absorption cross section and small building block size, properties whi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8a8972d5b1203d12536611d22729a587
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-327125
http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-327125
Autor:
Fallica, R., Haitjema, J., Wu, L., Castellanos Ortega, S., Brouwer, F., Ekinci, Y., Panning, E.M., Goldberg, K.A.
Publikováno v:
Extreme Ultraviolet (EUV) Lithography VIII: 27 February–2 March 2017, San Jose, California, United States
Extreme Ultraviolet (EUV) Lithography VIII
Extreme Ultraviolet (EUV) Lithography VIII
The experimental measurement of the time-dependent absorption of photoresists at extreme ultraviolet wavelength is of great interest for the modeling of the lithographic process. So far, several technical challenges have made the accurate determinati
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::672df16f9d7fed84e4ae6e8535b48b09
https://doi.org/10.1117/12.2257240
https://doi.org/10.1117/12.2257240
