In-situ learning harnessing intrinsic resistive memory variability through Markov Chain Monte Carlo Sampling

Autor: Dalgaty, Thomas, Castellani, Niccolo, Querlioz, Damien, Vianello, Elisa

Resistive memory technologies promise to be a key component in unlocking the next generation of intelligent in-memory computing systems that can act and learn locally at the edge. However, current approaches to in-memory machine learning focus often

Externí odkaz: http://arxiv.org/abs/2001.11426

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1S1R Sub-threshold Operation in Crossbar Arrays for Neural Networks Hardware Implementation

Autor: Minguet Lopez, Joel, Dampfhoffer, Manon, Hirtzlin, Tifenn, Reganaz, Lucas, Grenouillet, Laurent, Navarro, Gabriele, Bernard, Mathieu, Magis, Thomas, Carabasse, Catherine, Castellani, Niccolo, Meli, Valentina, Vianello, Elisa, Deleruyelle, Damien, Portal, Jean-Michel, Molas, Gabriel, Andrieu, François

Publikováno v: Mixed Design of Integrated Circuits and Systems (MIXDES)
Mixed Design of Integrated Circuits and Systems (MIXDES), Jun 2023, Krakow, Poland
MIXDES 2023
MIXDES 2023, Jun 2023, CRACOVIE, Poland
30th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES )
30th International Conference Mixed Design of Integrated Circuits and Systems (MIXDES ), Jun 2023, Krakow, Poland

International audience; This paper presents an outlook of Crossbar memory array capabilities while operated in the sub-threshold regime. By means of experimental data obtained on a RRAM resistive device co-integrated in series with an OTS back-end se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::071d799c37bb76bc339571d88846b86d
https://hal.science/hal-04155023/document

Ge content optimization in Ge(SbSe)$_{1-x}$N OTS materials for selector applications

Autor: Laguna, Camille, Bernard, Mathieu, Fillot, Frederic, Rouchon, Denis, Rochat, Nevine, Garrione, Julien, Prazakova, Lucie, Nolot, Emmanuel, Meli, Valentina, Castellani, Niccolo, Martin, Simon, Sabbione, Chiara, Bourgeois, Guillaume, Cyrille, Marie-Claire, Militaru, Liviu, Souifi, Abdelkader, Andrieu, Francois, Navarro, Gabriele

Publikováno v: IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, 2022, 69 (11), pp.6277-6283. ⟨10.1109/TED.2022.3203368⟩

International audience; In this paper, we investigate the influence of germanium content in GeSbSeN based Ovonic Threshold Selector (OTS) devices. We performed physico-chemical analyses on five different Ge x (SbSe) 1-x N alloys in order to understan

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::b669eb5646739e6bf2aaeea8598cf8ec
https://cea.hal.science/cea-03938734/file/CLaguna_TED_2021_VF.pdf

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